R. Li

发表

Selective epitaxial growth Si resonant-cavity photodetector

J. Denton, J. Schaub, G. Neudeck, 1998, IEEE Photonics Technology Letters.

Resonant-cavity-enhanced high-speed Si photodiode grown by epitaxial lateral overgrowth

C. Schow, J. Denton, J.C. Campbell, 1999, IEEE Photonics Technology Letters.

Flicker noise in GaN/Al/sub 0.15/Ga/sub 0.85/N doped channel heterostructure field effect transistors

V. Rao, C. Viswanathan, A. Balandin, 1998, IEEE Electron Device Letters.

A 1-Gb/s monolithically integrated silicon NMOS optical receiver

Joe C. Campbell, Clint L. Schow, Jeremy D. Schaub, 1998 .

A high-speed monolithic silicon photoreceiver fabricated on SOI

J.C. Campbell, J.C. Campbell, J. Schaub, 2000, IEEE Photonics Technology Letters.

An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with F/sub max/ of 107 GHz

Y. Chen, S.C. Martin, R. Smith, 1999, IEEE Electron Device Letters.

Bandwidth Analysis of a p-π-n Si Photodetector

H. C. Lee, C. Menyuk, J. Denton, 2016 .

Effect of channel doping on the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors

Alexander A. Balandin, Kang L. Wang, Sergey Morozov, 1999 .

Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications

Alexander A. Balandin, Kang L. Wang, Sergey Morozov, 1999 .

Magnetotransport study on the two-dimensional electron gas in AlGaN/GaN heterostructures

Kang L. Wang, Hongwen Jiang, S. Cai, 1998 .