Hai-Shan Zhang

发表

Band-Gap Modulation in Single Bi3+-Doped Yttrium–Scandium–Niobium Vanadates for Color Tuning over the Whole Visible Spectrum

Xiaobao Yang, D. Lei, M. Peng, 2016 .

Role of intrinsic defects on the persistent luminescence of pristine and Mn doped ZnGa2O4

Yu-Jun Zhao, Yao Yao, Shifeng Zhou, 2019, Journal of Applied Physics.

3D Foam Strutted Graphene Carbon Nitride with Highly Stable Optoelectronic Properties

Yu-Jun Zhao, G. Dong, J. Qiu, 2017 .

Effects of organic cations on the defect physics of tin halide perovskites

Yu-Jun Zhao, Yanfa Yan, H. Yip, 2017 .

The role of oxygen defects in a bismuth doped ScVO4 matrix: tuning luminescence by hydrogen treatment

Yu-Jun Zhao, D. Lei, M. Peng, 2017 .

Origin of Ga vacancy-related YL center in n-type GaN: A first-principles study

Hai-Shan Zhang, Lin Shi, Qianjin Wang, 2022, Journal of Luminescence.

Theoretical Simulation and Experimental Verification of the Competition between Different Recombination Channels in GaN Semiconductor

Lin Shi, Xiaobao Yang, Xuelin Yang, 2022, Journal of Materials Chemistry C.

Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN.

W. Ge, Qing Zhang, N. Tang, 2018, Physical review letters.

First‐Principles Calculations of Quantum Efficiency for Point Defects in Semiconductors: The Example of Yellow Luminance by GaN: CN+ON and GaN:CN

Lin-wang Wang, Yu-Jun Zhao, Ke Xu, 2017 .

Antisite Defect SiC as a Source of the DI Center in 4H‐SiC

J. Gong, Hai-Shan Zhang, Lin Shi, 2022, physica status solidi (RRL) – Rapid Research Letters.

Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN.

W. Ge, Qing Zhang, N. Tang, 2018, Physical review letters.