H. Seto

发表

Integrated Pyroelectric Infrared Sensor Using PbTiO3Thin Film

M. Okuyama, Y. Hamakawa, H. Seto, 1983 .

Moisture-resistant ZnO transparent conductive films with Ga heavy doping

T. Makino, Y. Yoshino, H. Seto, 2006 .

Incorporation Behavior of Si Atoms in the Molecular Beam Epitaxial Growth of GaAs on Misoriented (111)A Substrates

H. Katahama, I. Fujimoto, H. Seto, 1990 .

Si doping and MBE growth of GaAs on tilted (111)A substrates

H. Katahama, I. Fujimoto, H. Seto, 1991 .

Effects of Substrate Misorientation and the Growth Mechanism of Si Doped GaAs Grown on (111)A Substrate by MBE

I. Fujimoto, H. Seto, S. Nishine, 1989 .

MICROSCOPIC STRUCTURE AND COMPENSATION MECHANISM OF HEAVILY Si-DOPED GaAs GROWN ON (111)A, B AND (100) SUBSTRATES BY MOLECULAR BEAM EPITAXY

H. Katahama, K. Nakanishi, I. Fujimoto, 1990 .

Improvement in moisture durability of ZnO transparent conductive films with Ga heavy doping process

Y. Yoshino, H. Seto, Y. Kishimoto, 2008 .

IR-OPFET: Infrared Sensor Using PbTiO3 Pyroelectric Film

M. Okuyama, Y. Hamakawa, H. Seto, 1980 .

Characteristics of Heavily Si-Doped GaAs grown on (111)A Oriented Substrate by Molecular Beam Epitaxy as Compared with (100) growth

H. Katahama, I. Fujimoto, H. Seto, 1989 .