K. Aizawa

High Quality Ultrathin La2O3 Films for High-k Gate Insulator

H. Iwai, H. Ishiwara, E. Tokumitsu, 2001, 31st European Solid-State Device Research Conference.

Ferroelectric properties of face-to-face annealed Sr/sub 0.8/Bi/sub x/Ta/sub 2/O/sub 9/ thin films

E. Tokumitsu, K. Aizawa, K. Iizuka, 2000, ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on Applications of Ferroelectrics (IEEE Cat. No.00CH37076).

CHARACTERIZATION OF (Bi,Nd)4Ti3O12/HfO2/p-TYPE Si STRUCTURES FOR MFIS-FeRAM APPLICATION

Y. Arimoto, H. Hoko, H. Ishiwara, 2006 .

Formation of Ferroelectric (Bi, Nd)4Ti3O12 Thin Films on HfO2/Si(100) Structures for MFIS-type Ferroelectric Memory Applications

Y. Arimoto, H. Ishiwara, Yoshiaki Tabuchi, 2004 .