B. Conley

发表

Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection.

Wei Du, Seyed Amir Ghetmiri, Aboozar Mosleh, 2014, Optics express.

GeSn Devices for Short-Wave Infrared Optoelectronics

B. Conley, 2011 .

Temperature-dependent characterization of G0.94Sn0.06 light-emitting diode grown on Si via CVD

R. Soref, A. Mosleh, J. Margetis, 2015, 2015 Conference on Lasers and Electro-Optics (CLEO).

Infrared spectral response of a GeSn p-i-n photodiode on Si

R. Soref, A. Mosleh, J. Margetis, 2014, 11th International Conference on Group IV Photonics (GFP).

Growth and Characterization of Epitaxial Ge1-XSnx Alloys and Heterostructures Using a Commercial CVD System

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Strain Relaxation and Material Quality Improvement of Compressively Strained GeSn Epitaxial Films through a Cyclic Rapid Thermal Annealing Process

R. Soref, A. Mosleh, J. Margetis, 2014, 2014 IEEE Photonics Society Summer Topical Meeting Series.

Enhanced responsivity by integration of interdigitated electrodes on Ge0.93Sn0.07 infrared photodetectors

R. Soref, A. Mosleh, J. Margetis, 2014, 2014 IEEE Photonics Conference.

Temperature Dependent Spectral Response and Responsivity of GeSn Photoconductor on Si

R. Soref, A. Mosleh, J. Margetis, 2014, 2014 IEEE Photonics Society Summer Topical Meeting Series.

Nucleation-step study of silicon homoepitaxy for low-temperature fabrication of Si solar cells

A. Mosleh, S. Ghetmiri, M. Benamara, 2013, 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).

Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Enhanced responsivity up to 2.85 A/W of Si-based Ge0.9Sn0.1 photoconductors by integration of interdigitated electrodes

R. Soref, A. Mosleh, J. Margetis, 2015, 2015 Conference on Lasers and Electro-Optics (CLEO).

Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

Wei Du, Richard A. Soref, Joe Margetis, 2015 .

Material Characterization of Ge1−xSnx Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications

Hameed A. Naseem, Seyed Amir Ghetmiri, Aboozar Mosleh, 2014, Journal of Electronic Materials.

Investigation on the Formation and Propagation of Defects in GeSn Thin Films

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Shortwave-infrared photoluminescence from Ge1−xSnx thin films on silicon

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

High efficiency MJ solar cells and TPV using SiGeSn materials

H. Naseem, Shui-Qing Yu, G. Sun, 2012, 2012 38th IEEE Photovoltaic Specialists Conference.

Designing Plasmonic Hot Carrier Devices for Uncooled Infrared Photodetection

J. Valentine, T. Morgan, J. Caldwell, 2020, 2020 IEEE Research and Applications of Photonics in Defense Conference (RAPID).