G. Watson

发表

MEMS thermal imager with optical readout

Nagesh R. Basavanhally, J. F. Miner, J. E. Bower, 2009 .

Towards 280 nm i-line random logic lithography with off-axis illumination and optical proximity correction

J. Garofalo, G. Watson, I. Grodnensky, 1997 .

Writing an arbitrary non-periodic pattern using interference lithography

O. Nalamasu, G. Watson, S. Pau, 2001 .

Minority‐ and majority‐carrier trapping in strain‐relaxed Ge0.3Si0.7/Si heterostructure diodes grown by rapid thermal chemical‐vapor deposition

E. Fitzgerald, Yahong Xie, S. Ringel, 1995 .

Error budget analysis of the SCALPEL(R) mask for sub‐0.2 μm lithography

J. Liddle, H. Huggins, G. Watson, 1995 .

193 nm single layer resist strategies, concepts, and recent results

Allen H. Gabor, F. Houlihan, O. Nalamasu, 1998 .

High density submicron features using a laser pattern generator and double patterning

A. Novembre, M. Gaevski, G. Watson, 2009 .

Electron trapping kinetics at dislocations in relaxed Ge0.3Si0.7/Si heterostructures

E. Fitzgerald, Yahong Xie, S. Ringel, 1995 .

Passivation of deep level states caused by misfit dislocations in InGaAs on patterned GaAs

T. Anderson, B. Pathangey, G. Watson, 1993 .

The measurement of deep level states caused by misfit dislocations in InGaAs/GaAs grown on patterned GaAs substrates

Y. Hayakawa, T. Anderson, B. Pathangey, 1992 .

Measurement of the mean free path of dislocation glide in the InGaAs/GaAs materials system

J. Shealy, G. Watson, D. Ast, 1996 .

The isolation and nucleation of misfit dislocations in strained epitaxial layers grown on patterned, ion-damaged GaAs

M. Thompson, A. Fischer-Colbrie, G. Watson, 1990 .

Misfit dislocation interactions observed by cathodoluminescence in InGaAs on off-cut, patterned GaAs

G. Watson, D. Ast, 2003 .

Relaxed, low threading defect density Si0.7Ge0.3 epitaxial layers grown on Si by rapid thermal chemical vapor deposition

E. Fitzgerald, D. Monroe, Yahong Xie, 1994 .

The control and properties of misfit dislocations in OMCVD growth epitaxial layers

Y. Hayakawa, G. Watson, T. Anderson, 1990 .

Sub-wavelength printing using multiple overlapping masks

G. Timp, F. Klemens, O. Nalamasu, 2000 .

The Fabrication of Self-Aligned Ohmic Cobalt Contacts to Relaxed, N-Type Si 0.7 Ge 0.3

E. Fitzgerald, D. Monroe, R. Vandover, 1993 .

Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area

Eugene A. Fitzgerald, Peter D. Kirchner, Jerry M. Woodall, 1989 .

Influence of misfit dislocation interactions on photoluminescence spectra of SiGe on patterned Si

E. Fitzgerald, Yahong Xie, J. Benton, 1998 .

Fabrication of high mobility two‐dimensional electron and hole gases in GeSi/Si

E. Fitzgerald, D. Monroe, Yahong Xie, 1993 .

Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy

E. Fitzgerald, D. Monroe, Yahong Xie, 1993 .

Variation of lattice parameter with silicon concentration in n‐doped, liquid‐encapsulated Czochralski GaAs single crystals

G. Watson, D. Ast, A. Elliot, 1989 .

Effect of Annealing on the Contact Resistance of Aluminum on a p-type Substrate

Shrey A Shah, G. Watson, 2019 .

Focus drilling and attenuated phase shift mask for subwavelength contact window printing using positive and negative resists

Raymond A. Cirelli, Omkaram Nalamasu, J. Frackoviak, 1999 .

Dose modification proximity effect correction scheme with inherent forward scattering corrections

Linus A. Fetter, J. Alexander Liddle, L. Fetter, 1997 .

Macro- and Micro-Scale Probing of the Mechanical Properties of DNA-Crosslinked Gels Using Embedded Inclusions

D. C. Lin, N. Langrana, B. Yurke, 2005 .

The thermal stability of lattice mismatched InGaAs grown on patterned GaAs

Y. Hayakawa, B. Pathangey, G. Watson, 1991 .

Comparison of mobility‐limiting mechanisms in high‐mobility Si1−xGex heterostructures

E. Fitzgerald, D. Monroe, Yahong Xie, 1993 .

Determination of threading dislocation density in hetero-epitaxial layers by diffuse X-ray scattering

E. Fitzgerald, G. Bauer, V. Holý, 1995 .

A graphene pH sensor fabrication process for a nanotechnology laboratory course

G. Watson, Yeonjoon Suh, Shrey Shah, 2022, Journal of the Society for Information Display.

The barrier to misfit dislocation glide in continuous, strained, epitaxial layers on patterned substrates

T. Anderson, B. Pathangey, G. Watson, 1993 .

Controlled misfit dislocation nucleation in Si0.90Ge0.10 epitaxial layers grown on Si

E. Fitzgerald, Yahong Xie, K. Short, 1993 .

Influence of trench depth on the misfit dislocation density at strained epitaxial layer interfaces grown on patterned GaAs substrates

Y. Hayakawa, T. Anderson, G. Watson, 1991 .