Jiung Wu

Characterization of Hf1-xZrxO2 Gate Dielectrics with 0≤x≤1 Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications

C. C. Liu, Chien-Hung Wu, Shui-Jinn Wang, 2011 .

Effect of copper barrier dielectric deposition process on characterization of copper interconnect

Ying-Lang Wang, Huan Wang, Jiung Wu, 2010 .

Comprehensive comparison of electrical and reliability characteristics of various copper barrier filmsa)

Ying-Lang Wang, Jiung Wu, Yi-Lung Cheng, 2011 .

Electrical and reliability performances of nitrogen-incorporated silicon carbide dielectric by chemical vapor deposition

Jiung Wu, Yi-Lung Cheng, Tai-Jung Chiu, 2010 .

Effect of fluorine flow and deposition temperature on physical characteristics and stability of fluorine-doped siloxane-based low-dielectric-constant material

Jiung Wu, Yi-Lung Cheng, Tai-Jung Chiu, 2010 .

Influence of temperature on the hydrogenated amorphous carbon films prepared by plasma-enhanced chemical vapor deposition

Jiung Wu, Yi-Lung Cheng, Ming-Kai Shiau, 2010 .

Comparison of equivalent oxide thickness and electrical properties of atomic layer deposited hafnium zirconate dielectrics with thermal or decoupled plasma nitridation process

Chien-Hung Wu, Shui-Jinn Wang, C. Chiang, 2012, Electronic Materials Letters.