S. Lenk

发表

Gadolinium scandate thin films as an alternative gate dielectric prepared by electron beam evaporation

M. Caymax, S. Mantl, J. Schubert, 2006 .

Ga-assisted MBE growth of GaAs nanowires using thin HSQ layer

D. Grützmacher, S. Lenk, T. Rieger, 2012 .

LaScO 3 as a higher-κ dielectric for p-MOSFETs

K. Bourdelle, S. Mantl, A. Nichau, 2011 .

LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process

S. Mantl, L. Knoll, A. Nichau, 2012 .

Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs

S. Mantl, L. Knoll, A. Nichau, 2011, Ulis 2011 Ultimate Integration on Silicon.

SmScO3 thin films as an alternative gate dielectric

B. Holländer, Y. Jia, S. Mantl, 2008 .

Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate high-κ films prepared by molecular beam deposition

U. Littmark, S. Mantl, A. Besmehn, 2007 .

Characterization and electrical properties of high-k GdScO3 thin films grown by atomic layer deposition

S. Mantl, M. Roeckerath, M. Putkonen, 2007 .

Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon

S. Mantl, C. Sandow, M. Roeckerath, 2009 .

Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and their Integration as High-k Gate Dielectrics in MOSFET Devices

S. Mantl, Qing-Tai Zhao, A. Nichau, 2011 .

Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field- effect transistors

K. Bourdelle, S. Mantl, Qing-Tai Zhao, 2011 .

Fully depleted SOI- and sSOI-MOSFETs with GdScO3 as gate dielectric

S. Mantl, M. Roeckerath, J. Lopes, 2008, 2008 9th International Conference on Ultimate Integration of Silicon.

Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation

S. Mantl, Qing-Tai Zhao, D. Buca, 2008 .

Comparison of InAs nanowire conductivity: influence of growth method and structure

T. Schäpers, H. Lüth, D. Grützmacher, 2012 .

The role of oxidative etching in the synthesis of ultrathin single-crystalline Au nanowires.

D. Mayer, A. Offenhäusser, U. Simon, 2011, Chemistry.

Isotopic labeling study of oxygen diffusion in amorphous LaScO3 high-κ films on Si(100) and its effects on the electrical characteristics

U. Littmark, S. Mantl, C. Radtke, 2009 .

Segregation of ion implanted sulfur in Si(100) after annealing and nickel silicidation

S. Mantl, Qing-Tai Zhao, U. Breuer, 2007 .

Integration of $\hbox{LaLuO}_{3} \ (\kappa \sim \hbox{30})$ as High-$\kappa$ Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

K. Bourdelle, S. Mantl, A. Nichau, 2011, IEEE Electron Device Letters.

Determination of the Stability Constant of the Intermediate Complex during the Synthesis of Au Nanoparticles Using Aurous Halide

D. Mayer, A. Offenhäusser, Y. Mourzina, 2009 .

Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology

B. Holländer, S. Mantl, J. Schubert, 2011 .

Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

Jürgen Schubert, S. Mantl, U. Littmark, 2009 .

The role of oxidative etching in the synthesis of ultrathin single-crystalline Au nanowires.

D. Mayer, A. Offenhäusser, U. Simon, 2011, Chemistry.