S. Kar

发表

Characterization of accumulation layer capacitance for extracting data on high-/spl kappa/ gate dielectrics

S. Rakheja, D. Reddy, S. Kar, 2005, IEEE Transactions on Electron Devices.

Determination of the semiconductor doping profile right up to its surface using the MIS capacitor

S. Kar, S. Kar, K. Ziegler, 1975 .

Introduction to High-k Gate Stacks

S. Kar, 2013 .

On the design and operation of electrochemical solar cells

K. Rajeshwar, S. Kar, J. Dubow, 1979 .

Properties of electronic traps at silicon/1-octadecene interfaces

Dominique Vuillaume, Corinne Miramond, D. Vuillaume, 2001 .

Potentials and direct current in Si-(20 to 40 Å)SiO2-metal structures

W. Dahlke, S. Kar, 1972 .

Evidence of tunnel‐assisted transport in nondegenerate MOS and semiconductor‐oxide‐semiconductor diodes at room temperature

S. Ashok, S. Fonash, S. Kar, 1980 .

Rapid thermal processing of high dielectric constant gate dielectrics for sub 70 nm silicon CMOS technology

K. F. Poole, S. Kar, R. Singh, 2002, 10th IEEE International Conference of Advanced Thermal Processing of Semiconductors.

Determination of the Channel Doping Density in MOS Devices with High-K Gate Dielectrics

D. Reddy, S. Kar, 2006 .

Parameter extraction using novel phenomena in nano-MOSFETs with ultra-thin (EOT = 0.46–1.93 nm) high-K gate dielectrics

S. Kar, 2006 .

Extraction of the Capacitance of

S. Kar, Ultrathin High, Gate Dielectrics, 2003 .

Characteristics of ultrathin [4-7 nm] gate oxides for SiGe quantum well MOS structures

P. Zaumseil, S. Kar, 1999 .

Electrical characteristics of silicon‐tin oxide heterojunctions prepared by chemical vapor deposition

K. Rao, S. Kar, S. Varma, 1984 .

Determination of minority carrier lifetime using MIS tunnel diodes

S. Kar, 1974 .

Determination of silicon‐silicon dioxide interface state properties from admittance measurements under illumination

S. Kar, S. Varma, 1985 .

Interface states in MOS structures with 20–40 Å thick SiO2 films on nondegenerate Si

W. Dahlke, S. Kar, S. Kar, 1972 .

Dependence of Si-SiO2 interface state density on oxide thickness in structures with ultrathin (79-227 Å) oxides

K. S. Chari, S. Kar, D. Shanker, 1985 .

METAL‐DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURES

W. Dahlke, S. Kar, 1971 .

Characteristics of the Si‐SiO2 interface states in thin (70–230 Å) oxide structures

S. Kar, R. Narasimhan, 1987 .

Ion-dosage-dependent room-temperature hysteresis in MOS structures with thin oxides

S. Ashok, A. Raychaudhuri, S. Kar, 1991 .

Determination of semiconductor quasi‐Fermi level separation under illumination

S. Kar, S. Varma, 1983 .

Interface investigation using transparent conductor-oxide-silicon structures

S. Ashok, S. Kar, P. Saraswat, 1982 .

Atomic hydrogen passivation of ion implantation damage at Si-SiO 2 interfaces

S. Ashok, S. Kar, 1996 .

High permittivity gate dielectric materials

S. Kar, 2013 .

On the Characteristics of Traps and Charges in the Si/SiO2/HfO2/TaN High-k Gate Stacks

S. Kar, 2014 .

Extraction of the capacitance of ultrathin high-K gate dielectrics

S. Kar, S. Kar, 2003 .

Micro‐Raman study of ion‐irradiated oxidized silicon surfaces

H. D. Bist, R. Tripathi, S. Kar, 1993 .

Investigation of room‐temperature ion beam hydrogenation for the removal of traps in silicon ion beam damaged metal‐oxide‐silicon structures

S. Ashok, S. Kar, 1993 .

Effects of Process‐Induced Damage on Metal Oxide Semiconductor Structures with 115 Å Thin Gate Oxides

S. Ashok, A. Pandey, A. Raychaudhuri, 1992 .

Ion beam modification of the dielectric properties of thin silicon dioxide films

S. Ashok, A. Raychaudhuri, S. Kar, 1991 .

Passivation of ion‐beam damage in metal‐oxide‐silicon structures by room‐temperature hydrogenation

S. Ashok, S. Kar, K. Srikanth, 1992 .

Novel features in the strain profile and gate oxide capacitance of through-gate-oxide implanted structures

P. Zaumseil, S. Kar, 1997 .

Removal of Traps in Process-Damaged MOS Structures by Room-Temperature Hydrogenation

S. Kar, 1993 .

Passivation of Ion-Beam-Induced Defects at and Around the Si-SiO 2 Interface by Ion Beam Hydrogenation

S. Ashok, S. Kar, K. Srikanth, 1992 .

Electron Bean Induced Defects in Silicon/Indium Oxide Heterojunctions and Interfacial Reactions During Annealing

A. Pandey, S. Kar, R. K. Dwivedi, 1986 .

Interface charge characteristics of MOS structures with different metals on steam grown oxides

S. Kar, 1975 .

Determination of Si-metal work function differences by MOS capacitance technique

S. Kar, S. Kar, 1975 .

Low Trap Density Nonleaky SiGe Quantum Well MOS Structures:Fabrication and Characteristics

P. Zaumseil, S. Kar, 2001 .

Ultimate gate oxide thinness set by recombination-tunneling of electrons via Si–SiO2 interface traps

S. Kar, S. Kar, 2000 .

MOSFET: Basics, Characteristics, and Characterization

S. Kar, S. Kar, 2013 .

On the role of interface states in MOS solar cells

S. Kar, 1978 .

Interface Characteristics of Metal‐Oxide‐Semiconductor Capacitors with Ultrathin Oxides

K. S. Chari, S. Kar, 1991 .