A. Lino

发表

First principles studies of relativistic and spin–orbit effects on the HfO2 band structures

G. A. Farias, J. R. Leite, V. Freire, 2004 .

Self-consistent formulation of the variational cellular method applied to periodic structures—results for sodium and silicon

J. R. Leite, A. C. Ferraz, A. Lino, 1987 .

Band structure of silicon by the self-consistent variational cellular method

J. R. Leite, A. C. Ferraz, A. Lino, 1987 .

Behavior of carriers in δ‐doped quantum wells under in‐plane magnetic fields

J. R. Leite, A. Lino, L. Scolfaro, 1996 .

Structural, electronic, and optical properties of ZrO2 from ab initio calculations

G. A. Farias, V. Freire, E. F. Silva, 2006, 1204.2886.

Electronic properties of multiple delta-doped layers in silicon and GaAs

A. Lino, L. Scolfaro, E. K. Takahashi, 1994 .

H-band emission in single heterojunctions

N. O. Dantas, A. A. Quivy, J. R. Leite, 2003, Microelectron. J..

Optical Properties and Carrier Effective Masses of Rutile SnO2 as Obtained from Full Relativistic Ab Initio Calculations

E. F. Silva, A. Lino, L. Scolfaro, 2007 .

Electronic states of Mn4 complex cluster in silicon

A. Lino, V. Gomes, J. Leite, 2009 .

Band structure derived properties of HfO2 from first principles calculations

G. A. Farias, V. Freire, E. F. Silva, 2005, 1204.2898.

Effective masses and complex dielectric function of cubic HfO2

G. A. Farias, V. Freire, E. F. Silva, 2004, 1204.2895.