R. Cotton

Compatibility of Silicon gates with hafnium-based gate dielectrics

Raghaw Rai, Rama I. Hegde, L. Prabhu, 2003 .

Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

Raghaw Rai, Rama I. Hegde, L. Prabhu, 2002 .

Reduced gate leakage current and boron penetration of 0.18 /spl mu/m 1.5 V MOSFETs using integrated RTCVD oxynitride gate dielectric

Xin Guo, I. Yang, R. Hegde, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Stimulated crystallization of melt-quenched Ge2Sb2Te5 films employing femtosecond laser double pulses

J. Siegel, R. Cotton, 2012 .

Microstructure modified HfO/sub 2/ using Zr addition with Ta/sub x/ C/sub y/ gate for improved device performance and reliability

D. Gilmer, C. Tracy, A. Haggag, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..