V. Dhandapani

Compatibility of Silicon gates with hafnium-based gate dielectrics

Raghaw Rai, Rama I. Hegde, L. Prabhu, 2003 .

Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

Raghaw Rai, Rama I. Hegde, L. Prabhu, 2002 .

Metrology Challenges for 45-nm Strained-Si Device Technology

A. Thean, D. Theodore, B. Nguyen, 2006, IEEE Transactions on Semiconductor Manufacturing.

Fermi Level Pinning with Sub-monolayer MeOx and Metal Gates

D. Gilmer, S. Samavedam, A. Demkov, 2003 .

Metal gate MOSFETs with HfO/sub 2/ gate dielectric

P. Abramowitz, P.J. Tobin, E. Luckowski, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

Dual-metal gate CMOS with HfO2 gate dielectric

P. Abramowitz, J. Conner, E. Luckowski, 2002, Digest. International Electron Devices Meeting,.

Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics

Bich-Yen Nguyen, Raghaw Rai, M. Zavala, 2003 .

Fermi level pinning with sub-monolayer MeOx and metal gates [MOSFETs]

D. Gilmer, S. Samavedam, A. Demkov, 2003, IEEE International Electron Devices Meeting 2003.

High performance partially depleted SOI using spike RTA

L. Kang, G. Yeap, S. Venkatesan, 2003, 2003 IEEE International Conference on SOI.

Fermi level pinning at the polySi/metal oxide interface

S. Samavedam, V. Dhandapani, L. Hebert, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).