J. Essick

Characterization of a bulk semiconductor’s band gap via a near‐absorption edge optical transmission experiment

John Essick, J. Essick, Richard T. Mather, 1993 .

Dependence of the a-Si:H defect density of states on the magnetic field profile of an electron cyclotron resonance microwave plasma

F. Pool, J. Essick, Richard T. Mather, 1994 .

Dependence of the a-Si:H Defect Density of States on the Magnetic Field Profile of an Electron Cyclotron Resonance Microwave Plasma

F. Pool, J. Essick, Richard T. Mather, 1992 .

Material properties and device evaluations of ECR-deposited a-Si:H and a-SiC:H films

F. Pool, J. Essick, Y. Shing, 1991, The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.

Capacitance-voltage profiling: Research-grade approach versus low-cost alternatives

C. Panda, J. Essick, N. Reynolds, 2014 .

Band offsets and deep defect distribution in hydrogenated amorphous silicon‐crystalline silicon heterostructures

J. Essick, J. D. Cohen, 1989 .

Characterization of Electron Cyclotron Resonance Plasma-Deposited Hydrogenated Amorphous Silicon and Related Alloy Films

M. Holboke, F. Pool, J. Essick, 1991 .

Band Offsets and Anomalous Deep Defect Distribution at the Hydrogenated Amorphous Silicon-Crystalline Silicon Interface via Junction Capacitance Techniques

J. Essick, J. D. Cohen, 1989 .

Investigation of Amorphous-Crystalline Silicon Interface Via Capacitance Techniques

J. Essick, J. D. Cohen, 1988 .