U.K. Mishra

发表

Power performance of microwave high-electron mobility transistors

J.C.M. Hwang, P.C. Chao, P. Chao, 1985, IEEE Electron Device Letters.

Bias-dependent performance of high-power AlGaN/GaN HEMTs

Y.-F. Wu, P. Parikh, M. Moore, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTs

U.K. Mishra, S.P. DenBaars, T.P. Ma, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate

S. Kolluri, S. Keller, S. Denbaars, 2009, IEEE Electron Device Letters.

Measured microwave power performance of AlGaN/GaN MODFET

Y.-F. Wu, S. Keller, S. Denbaars, 1996, IEEE Electron Device Letters.

High breakdown GaN HEMT with overlapping gate structure

S. Keller, S. Heikman, S. Denbaars, 2000, IEEE Electron Device Letters.

Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs

A. Touboul, peixiong zhao, R. Reed, 2008, IEEE Transactions on Nuclear Science.

High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates

A. Chini, S. Keller, S. Heikman, 2004, IEEE Electron Device Letters.

Coupling of InGaN quantum well photoluminescence to silver surface plasmons

M. Boroditsky, E. Yablonovitch, I. Gontijo, 1999, 1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting. IEEE Lasers and Electro-Optics Society 1999 Annual Meeting (Cat. No.99CH37009).

Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer

U. Mishra, S. Chowdhury, U.K. Mishra, 2008, IEEE Electron Device Letters.

Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers

peixiong zhao, D. Fleetwood, R. Weller, 2004, IEEE Transactions on Nuclear Science.

GaN microwave electronics

Y.-F. Wu, S. Keller, S. Denbaars, 1997, 1997 Topical Symposium on Millimeter Waves. Proceedings (Cat. No.97TH8274).

Millimeter-wave low-noise high electron mobility transistors

K.H.G. Duh, J.C.M. Hwang, P.C. Chao, 1985, IEEE Electron Device Letters.

Gallium nitride electronics: Watt is the limit? [summary of GaN semiconductor devices]

U.K. Mishra, 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..

Current instabilities in GaN-based devices

C. Gaquiere, E. Kohn, A. Vescan, 2001, IEEE Electron Device Letters.

AlGaN/GaN high electron mobility transistors with InGaN back-barriers

S. Keller, S. Heikman, S. Denbaars, 2006, IEEE Electron Device Letters.

Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V

P. Kozodoy, Y.-F. Wu, P. Parikh, 1997, IEEE Electron Device Letters.

Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs

A. Chini, D. Buttari, S. Heikman, 2006, IEEE Transactions on Electron Devices.

High Al-content AlGaN/GaN MODFETs for ultrahigh performance

Y.-F. Wu, P. Fini, S. Keller, 1998, IEEE Electron Device Letters.

Plasma Treatment for Leakage Reduction in AlGaN/GaN and GaN Schottky Contacts

Rongming Chu, Likun Shen, S. Keller, 2008, IEEE Electron Device Letters.

8-watt GaN HEMTs at millimeter-wave frequencies

Y.-F. Wu, P. Parikh, A. Saxler, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Microwave performance of 0.25-µm gate length high electron mobility transistors

J.C.M. Hwang, P.C. Chao, P.M. Smith, 1985, IEEE Electron Device Letters.

Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs

G. Meneghesso, E. Zanoni, R. Coffie, 2002, IEEE Electron Device Letters.

Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs

S. Keller, S. Heikman, S. Denbaars, 2005, IEEE Transactions on Electron Devices.

Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE

P. Waltereit, U. Mishra, J. Speck, 2004, IEEE Electron Device Letters.

Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs

R. Coffie, A. Chini, D. Buttari, 2004, IEEE Electron Device Letters.

High-Breakdown Enhancement-Mode AlGaN/GaN HEMTs with Integrated Slant Field-Plate

S. Keller, N. Fichtenbaum, L. McCarthy, 2006, 2006 International Electron Devices Meeting.

AlGaN/AlN/GaN high-power microwave HEMT

R. Coffie, S. Keller, D. Buttari, 2001, IEEE Electron Device Letters.

Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs

Hongtao Xu, C. Sanabria, S. Heikman, 2005, IEEE Transactions on Microwave Theory and Techniques.

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

S. Keller, S. Denbaars, L. McCarthy, 2006, IEEE Electron Device Letters.

1 - 8-GHz GaN-based power amplifier using flip-chip bonding

S. Keller, S. Heikman, U. Mishra, 1999, IEEE Microwave and Guided Wave Letters.

GaAs MESFET's on a truly insulating buffer layer: demonstration of the GaAs on insulator technology

U. Mishra, P. Parikh, P. Chavarkar, 1997, IEEE Electron Device Letters.

Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT's

G. Meneghesso, E. Zanoni, C. Canali, 2002, Digest. International Electron Devices Meeting,.

Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges

H. Masui, S. Denbaars, S. Nakamura, 2010, IEEE Transactions on Electron Devices.

High-efficiency class-E power amplifier using field-plated GaN HEMTs

S. Heikman, U.K. Mishra, R.A. York, 2005, IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05..

Total GaN solution to electrical power conversion

Y.-F. Wu, P. Parikh, R. Coffie, 2011, 69th Device Research Conference.

MOCVD-Grown AlGaN Buffer GaN HEMTs With V-Gates for Microwave Power Applications

Rongming Chu, S. Denbaars, U. Mishra, 2009, IEEE Electron Device Letters.

Dual-gate AlGaN/GaN modulation-doped field-effect transistors with cut-off frequencies f/sub T/>60 GHz

R. Coffie, S. Keller, K. Krishnamurthy, 2000, IEEE Electron Device Letters.

High-performance E-mode AlGaN/GaN HEMTs

S. Keller, S. Denbaars, T. Palacios, 2006, IEEE Electron Device Letters.

G. Meneghesso, E. Zanoni, C. Canali, 2004, IEEE Transactions on Electron Devices.

High-power, high-speed, low-temperature-grown GaAs p-i-n traveling-wave photodetector

Yi-Jen Chiu, J. Bowers, A. Gossard, 1998, Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178).

A comparative study of SiN deposition methods for millimeter-wave AlGaN/GaN HFETs

M. Higashiwaki, Rongming Chu, S. Keller, 2008, 2008 Device Research Conference.

V-Gate GaN HEMTs for X-Band Power Applications

Rongming Chu, Likun Shen, S. Keller, 2008, IEEE Electron Device Letters.

Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment

S. Denbaars, T. Palacios, N. Fichtenbaum, 2006, IEEE Electron Device Letters.

Temperature-Dependent Characterization of AlGaN/GaN HEMTs: Thermal and Source/Drain Resistances

L. Faraone, R. Menozzi, R. Menozzi, 2008, IEEE Transactions on Device and Materials Reliability.

A 2-GHZ three-stage AlInAs-GaInAs-InP HEMT MMIC low-noise amplifier

A.S. Brown, U. Mishra, L. Larson, 1993, IEEE Microwave and Guided Wave Letters.

High Al-content AlGaN/GaN HEMTs on SiC substrates with very high power performance

Y.-F. Wu, P. Parikh, J. Ibbetson, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Temperature dependent I-V characteristics of AlGaN/GaN HBTs and GaN BJTs

H. Xing, U. Mishra, U.K. Mishra, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier

Rongming Chu, S. Keller, Man Hoi Wong, 2008, IEEE Electron Device Letters.

Effect of ohmic contacts on buffer leakage of GaN transistors

S. Keller, S. Heikman, S. Denbaars, 2006, IEEE Electron Device Letters.

AlGaN/GaN current aperture vertical electron transistors

S. Heikman, S. Denbaars, U. Mishra, 2002, 60th DRC. Conference Digest Device Research Conference.

Gallium nitride based electronics and opto-electronics

S. Denbaars, U. Mishra, U.K. Mishra, 1998, 1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140).

Optimization of Annealing Process for Improved InGaN Solar Cell Performance

S. Keller, M. Wraback, S. Denbaars, 2013, Journal of Electronic Materials.

IIA-3 cryogenic noise performance of quarter-micrometer gate-length high-electron-mobility transistors

J.C.M. Hwang, P.C. Chao, M. Pospieszalski, 1985, IEEE Transactions on Electron Devices.

High-power AlGaN/GaN HEMTs for Ka-band applications

S. Keller, S. Denbaars, T. Palacios, 2005, IEEE Electron Device Letters.

High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation

R. Coffie, A. Chini, D. Buttari, 2004, IEEE Electron Device Letters.

Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs

G. Meneghesso, E. Zanoni, R. Coffie, 2002, IEEE Electron Device Letters.

High linearity GaN HEMT power amplifier with pre-linearization gate diode

V. Paidi, A. Chini, Likun Shen, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

Impact of Proton Irradiation-Induced Bulk Defects on Gate-Lag in GaN HEMTs

M. Silvestri, peixiong zhao, R. Reed, 2009, IEEE Transactions on Nuclear Science.

The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors

R. Wilkins, H. Barnaby, peixiong zhao, 2004, IEEE Transactions on Nuclear Science.

Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits

A.S. Brown, M. W. Pierce, R. Trew, 1989, IEEE Electron Device Letters.

The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs

Hongtao Xu, C. Sanabria, M. Rodwell, 2006, IEEE Electron Device Letters.

Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

Chang Soo Suh, R. Chu, F. Recht, 2007, IEEE Electron Device Letters.

Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHz

Y.-F. Wu, S. Keller, S. Denbaars, 1997, IEEE Electron Device Letters.

A GaN differential oscillator with improved harmonic performance

Hongtao Xu, C. Sanabria, S. Heikman, 2005, IEEE Microwave and Wireless Components Letters.

Ge-spacer technology in AlGaN/GaN HEMTs for mm-wave applications

S. Keller, S. Denbaars, T. Palacios, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Gate breakdown in MESFETs and HEMTs

R. Trew, U. Mishra, U.K. Mishra, 1991, IEEE Electron Device Letters.

The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs

S. Keller, R. Cuerdo, F. Calle, 2009, IEEE Electron Device Letters.

Noise parameters and light sensitivity of low-noise high-electron-mobility transistors at 300 and 12.5 K

S. Weinreb, J.C.M. Hwang, M. Pospieszalski, 1986, IEEE Transactions on Electron Devices.

Status of AlGaN/GaN HEMT technology - a UCSB perspective

U. Mishra, U.K. Mishra, 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

3 - 9-GHz GaN-based microwave power amplifiers with L-C-R broad-band matching

Y.-F. Wu, S. Keller, U. Mishra, 1999, IEEE Microwave and Guided Wave Letters.

Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE

R. Trew, U. Mishra, R. Kolbas, 1990, IEEE Electron Device Letters.

High power GaN oscillators using field-plated HEMT structure

Hongtao Xu, C. Sanabria, S. Keller, 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..