Linda T. Romano

发表

Stress Gradients In Heteroepitaxial Gallium Nitride Films

Joel W. Ager, Christian Kisielowski, L. Romano, 1997 .

Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition

Joel W. Ager, C. Walle, L. Romano, 2000 .

Magnesium incorporation in GaN grown by molecular-beam epitaxy

Thomas H. Myers, L. Romano, A. Ptak, 2001 .

PHASE SEPARATION IN InGaN/GaN MULTIPLE QUANTUM WELLS

David P. Bour, Matthew D. McCluskey, Brent S. Krusor, 1998 .

Realization of a complex-coupled InGaN/GaN-based optically pumped multiple-quantum-well distributed-feedback laser

Daniel Hofstetter, Michael Kneissl, Thomas L. Paoli, 2000 .

Dipole moments of gyricon balls

Nicholas K. Sheridon, Joseph M. Crowley, Linda T. Romano, 2002 .

Gallium Nitride Thick Films Grown by Hydride Vapor Phase Epitaxy

Roshan L. Aggarwal, I. Melngailis, Elliott R. Brown, 1996 .

Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

Satoshi Kurai, Hisao Sato, Kenji Yamashita, 1998 .

Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition

Theodore D. Moustakas, T. Moustakas, L. Romano, 1997 .

Interdiffusion of In and Ga in InGaN quantum wells

Matthew D. McCluskey, Brent S. Krusor, N. M. Johnson, 1998 .

InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off

William S. Wong, Michael Kneissl, David P. Bour, 2000 .

Room-temperature continuous-wave operation of InGaN multiple-quantum-well laser diodes with an asymmetric waveguide structure

Michael Kneissl, David P. Bour, Mark Teepe, 1999 .

Room-temperature pulsed operation of an electrically injected InGaN/GaN multi-quantum well distributed feedback laser

Daniel Hofstetter, Michael Kneissl, David P. Bour, 1998 .

Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching

Michael Kneissl, David P. Bour, Brent S. Krusor, 1998 .

Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching

Ilesanmi Adesida, Richard J. Molnar, Chris Youtsey, 1999 .

Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures

Michael Kneissl, David P. Bour, Matthew D. McCluskey, 1999 .

LARGE BAND GAP BOWING OF INXGA1-XN ALLOYS

Matthew D. McCluskey, N. M. Johnson, L. Romano, 1998 .

Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates

William S. Wong, Michael Kneissl, David P. Bour, 2000 .

Surface energetics, pit formation, and chemical ordering in InGaN alloys

Jörg Neugebauer, L. Romano, J. Neugebauer, 1999 .

Threading dislocations in GaAs grown with free sidewalls on Si mesas

Brent S. Krusor, R. D. Bringans, David K. Biegelsen, 1994 .

Growth of gallium nitride by hydride vapor-phase epitaxy

Noble M. Johnson, Richard J. Molnar, L. Romano, 1997 .