John E. Northrup

发表

Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates

Hongen Shen, Michael Wraback, Zhihong Yang, 2011 .

GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations

David W. Greve, Marek Skowronski, Jörg Neugebauer, 1999 .

SURFACE MORPHOLOGY OF GaN SURFACES DURING MOLECULAR BEAM EPITAXY

David W. Greve, Jörg Neugebauer, C. D. Lee, 2000 .

Magnesium incorporation in GaN grown by molecular-beam epitaxy

Thomas H. Myers, L. Romano, A. Ptak, 2001 .

Influence of quantum-well-barrier composition on gain and threshold current in AlGaN lasers

Michael Kneissl, N. M. Johnson, W. W. Chow, 2007 .

CLEAN AND AS-COVERED ZINC-BLENDE GAN(001) SURFACES : NOVEL SURFACE STRUCTURES AND SURFACTANT BEHAVIOR

Matthias Scheffler, Chris G. Van de Walle, John E. Northrup, 1998 .

In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers

Michael Wraback, Zhihong Yang, Thomas Wunderer, 2011 .

Ab initio calculation of the electronic and optical properties of solid pentacene

Steven G. Louie, Murilo L. Tiago, S. Louie, 2003 .

THEORY OF GAN(1010) AND (1120) SURFACES

J. Neugebauer, J. Northrup, John E. Northrup, 1996 .

Room-temperature continuous-wave operation of InGaN multiple-quantum-well laser diodes with an asymmetric waveguide structure

Michael Kneissl, David P. Bour, Mark Teepe, 1999 .

Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

Michael Kneissl, Thomas Wunderer, Christopher L. Chua, 2012 .

In-Well Pumped Blue GaN-Based Vertical-External-Cavity Surface-Emitting Lasers

Michael Wraback, Zhihong Yang, Thomas Wunderer, 2013 .

Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures

Michael Kneissl, David P. Bour, Matthew D. McCluskey, 1999 .

Optically pumped UV lasers grown on bulk AlN substrates

Michael Kneissl, Thomas Wunderer, Rafael Dalmau, 2012 .

Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates

William S. Wong, Michael Kneissl, David P. Bour, 2000 .

Surface energetics, pit formation, and chemical ordering in InGaN alloys

Jörg Neugebauer, L. Romano, J. Neugebauer, 1999 .

Growth and Surface Reconstructions of AlN(0001) Films

C. D. Lee, Randall M. Feenstra, J. Neugebauer, 2003 .

Atomic and electronic structure of polymer organic semiconductors: P3HT, PQT, and PBTTT

J. Northrup, John E. Northrup, 2007 .

Screw dislocations in GaN: The Ga-filled core model

J. Northrup, John E. Northrup, 2001 .

Two-dimensional deformation potential model of mobility in small molecule organic semiconductors

J. Northrup, John E. Northrup, 2011 .

Shallow electronic states induced by prismatic stacking faults in AlN and GaN

John E. Northrup, 2005 .

Structure of GaN(0001): The laterally contracted Ga bilayer model

Jörg Neugebauer, Randall M. Feenstra, A. Smith, 2000 .