Nikolaus Dietz

发表

Characterization of InN layers grown by high-pressure chemical vapor deposition

Ian T. Ferguson, A. G. U. Perera, William E. Fenwick, 2006 .

Optical properties of n-doped Ga1−xMnxN epitaxial layers grown by metal-organic chemical-vapor deposition in mid and far (5−50 μm) IR range

Martin Strassburg, Ian T. Ferguson, A. G. U. Perera, 2008 .

Real-time optical characterization of thin film growth

N. Dietz, Nikolaus Dietz, 2001 .

GaN/AlGaN ultraviolet/infrared dual-band detector

A. Bezinger, Martin Strassburg, Ian T. Ferguson, 2006 .

The Fermi level dependence of the optical and magnetic properties of Ga1−xMnxN grown by metal–organic chemical vapour deposition

Martin Strassburg, Ian T. Ferguson, Ali Asghar, 2006 .

Simultaneous detection of ultraviolet and infrared radiation in a single GaN/GaAlN heterojunction.

Margaret Buchanan, Gamini Ariyawansa, A G Unil Perera, 2008, Optics letters.

Negative capacitance in GaN/AlGaN heterojunction dual-band detectors

A. Bezinger, Ian T. Ferguson, Steven George Matsik, 2009 .

Seeded growth of AlN bulk crystals in m- and c-orientation

Balaji Raghothamachar, Michael Dudley, Rafael Dalmau, 2009 .

Lattice vibrations in hexagonal Ga1−xMnxN epitaxial films on c-plane sapphire substrates by infrared reflectance spectra

Martin Strassburg, Ian T. Ferguson, A. G. U. Perera, 2006 .

Composition dependence of the infrared dielectric functions in Si-doped hexagonal Al x Ga 1 − x N films on c -plane sapphire substrates

Martin Strassburg, Ian T. Ferguson, A. G. U. Perera, 2005 .

Correlation of the structural and ferromagnetic properties of Ga1−xMnxN grown by metalorganic chemical vapor deposition

Martin Strassburg, Adam M. Payne, Ian T. Ferguson, 2006 .

Sellmeier parameters for ZnGaP2 and GaP

Frank L. Madarasz, Klaus J. Bachmann, J. O. Dimmock, 2000 .

High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits

Shin Yokoyama, Seiichi Miyazaki, Masataka Hirose, 1997 .

Orientation mediated self-assembled gallium phosphide islands grown on silicon

Klaus J. Bachmann, Vijay Narayanan, K. Bachmann, 2000 .

Real-Time Optical Control of Ga1-xInxP Film Growth by P-Polarized Reflectance

Kazufumi Ito, Vincent Woods, K. Ito, 1999 .

Representation of GaP formation by a reduced order surface kinetics model using p-polarized reflectance measurements

Hien T. Tran, S. C. Beeler, Scott C. Beeler, 1999 .

Capacitance hysteresis in GaN/AlGaN heterostructures

A. Bezinger, Ian T. Ferguson, Steven George Matsik, 2009 .

GaN∕AlGaN heterojunction infrared detector responding in 8–14 and 20–70μm ranges

Martin Strassburg, Ian T. Ferguson, Ali Asghar, 2006 .