Huiyun Liu

发表

Effects of photon and thermal coupling mechanisms on the characteristics of self-assembled InAs/GaAs quantum dot lasers

Kristian M. Groom, Mark Hopkinson, D. J. Mowbray, 2007 .

Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate

John W. Cockburn, M. S. Skolnick, Z. G. Wang, 2002 .

Improving optical properties of 1.55 μm GaInNAs/GaAs multiple quantum wells with Ga(In)NAs barrier and space layer

John P. R. David, Mark Hopkinson, Jo Shien Ng, 2003 .

1.3 μm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

Kristian M. Groom, M. S. Skolnick, Mark Hopkinson, 2006 .

Gain in p-doped quantum dot lasers

Peter Michael Smowton, Mark Hopkinson, Ian C. Sandall, 2007 .

Characterization of structure and defects in dot-in-well laser structures

Mark Hopkinson, Miriam Herrera, David González, 2005 .

Growth and characterisation of multiple layer quantum dot lasers

Mark Hopkinson, Peter M. Smowton, D. J. Mowbray, 2005 .

Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

Kristian M. Groom, John P. R. David, M. S. Skolnick, 2004 .

Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

Richard A. Hogg, Kristian M. Groom, M. S. Skolnick, 2005 .

Charge separation and temperature-induced carrier migration in Ga1-xInxNyAs1-y multiple quantum wells

Thomas Nuytten, Victor Moshchalkov, Mark Hopkinson, 2011 .

Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots

Z. G. Wang, Huiyun Liu, Yuansha Chen, 2000 .

High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm

Qin Han, Huiyun Liu, Bowei Xu, 2001 .

Enhancing the dot density in quantum dot infrared photodetectors via the incorporation of antimony

Luke R. Wilson, John W. Cockburn, E. A. Zibik, 2007 .

Exciton fine structure splitting in dot-in-a-well structures

M. S. Skolnick, Mark Hopkinson, Max A. Migliorato, 2006 .

1.55μm InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer

Thomas Walther, Chao-Yuan Jin, A. G. Cullis, 2008 .

Suppression of InAs∕GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer

Pm Paul Koenraad, Mark Hopkinson, Jm José Maria Ulloa, 2007 .

LASERS, OPTICS, AND OPTOELECTRONICS 2865 Single-mode solid-state single photon source based on isolated quantum dots in pillar microcavities

Costas Fotakis, Eric Moreau, C. Kalpouzos, 2001 .

1.3 μm lasers with AlInAs-capped self-assembled quantum dots

M. S. Skolnick, Mark Hopkinson, D. J. Mowbray, 2003 .

High-Power and Broadband Quantum Dot Superluminescent Diodes Centered at 1250 nm for Optical Coherence Tomography

M. Hopkinson, S.K. Ray, Huiyun Liu, 2007, IEEE Journal of Selected Topics in Quantum Electronics.

1.3 µm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

David T. D. Childs, Kristian M. Groom, M. S. Skolnick, 2004 .

Broad-band Superluminescent Light Emitting Diodes Incorporating Quantum Dots in Compositionally Modulated Quantum Wells

Richard A. Hogg, Kristian M. Groom, Mark Hopkinson, 2005 .

Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells

Richard A. Hogg, Kristian M. Groom, Mark Hopkinson, 2005, DRC 2005.

Electronic energy levels and carrier dynamics in InAs/InGaAs dots-in-a-well structure investigated by optical spectroscopy

Rui Chen, Handong Sun, Handong Sun, 2010 .

p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency

Ben J. Stevens, Richard A. Hogg, Kristian M. Groom, 2006 .

Temperature dependence of threshold current in p-doped quantum dot lasers

Peter Michael Smowton, Mark Hopkinson, D. J. Mowbray, 2006 .