H. L’Haridon

Intra‐4f‐shell transitions at room temperature of Er3+ ions in Ca1−xErxF2+x thin films grown on Si(100)

S. Raoux, S. Raoux, Albert-Serge Barriere, 1994 .

Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials

M. Salvi, P. N. Favennec, Y. Le Guillou, 1989 .

Fe-doped InGaAs/InGaAsP photorefractive multiple quantum well devices operating at 1.55 μm

Bertrand Lambert, Stephane Gosselin, A. Corre, 1997 .

Relationship between self‐organization and size of InAs islands on InP(001) grown by gas‐source molecular beam epitaxy

S. Salaun, A. Corre, H. L’Haridon, 1995 .

Oxygen complexes in III‐V compounds as determined by secondary‐ion mass spectrometry under cesium bombardment

M. Salvi, M. Gauneau, D. Lecrosnier, 1989 .

Anomalous behavior of ion-implanted GaSb

M. Salvi, P. N. Favennec, M. Gauneau, 1991 .