Y. C. Chang

发表

MBE grown high κ dielectrics Ga2O3(Gd2O3) on GaN

Yun-Che Wang, Y. J. Lee, J. Kwo, 2007 .

Gate-metal formation-related kink effect and gate current on In0.5Al0.5As∕In0.5Ga0.5As metamorphic high electron mobility transistor performance

W. T. Chen, W. Lour, Y. Chang, 2006 .

Energy-band parameters of atomic-layer-deposition Al2O3/InGaAs heterostructure

Tzu-Ying Lin, J. Kwo, M. Hong, 2006 .

Atomic-layer-deposited HfO$_{2}$ on In$_{0.53}$Ga$_{0.47}$As -- passivation and energy-band parameters

Y. J. Lee, K. Y. Lee, J. Kwo, 2008 .

Sputtered Bi2Te3 and PbTe thin films

J. Y. Josefowicz, Y. Chang, Y. C. Chang, 1983 .

Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN

Y. J. Lee, Kuang-Li Lee, J. Kwo, 2007 .

Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

J. M. Hong, J. Kwo, C. Tsai, 2008 .

Surface passivation of III-V compound semiconductors using atomic-layer-deposition grown Al2O3

Y. J. Lee, J. Kwo, T. B. Wu, 2005 .

Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As

Yan-Kai Chiou, Tzu-Ying Lin, Kuang-Li Lee, 2006 .

Achieving 1nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As

Y. J. Lee, Kuang-Li Lee, J. Kwo, 2008 .

Energy-band parameters of atomic-layer-deposited Al$_{2}$O$_{3}$ and HfO$_{2}$ on InxGa$_{1-x}$As

J. Kwo, Y. H. Chang, M. Hong, 2009 .

Dielectric property of (TiO2)x−(Ta2O5)1−x thin films

J. Gan, Y. Chang, Y. C. Chang, 1998 .

III–V Metal–Oxide–Semiconductor Field-Effect Transistors with High κ Dielectrics

Tsung-Da Lin, J. Kwo, M. Hong, 2007 .