Minghwei Hong

发表

MBE grown high κ dielectrics Ga2O3(Gd2O3) on GaN

Yun-Che Wang, Y. J. Lee, J. Kwo, 2007 .

Energy-band parameters of atomic-layer-deposition Al2O3/InGaAs heterostructure

Tzu-Ying Lin, J. Kwo, M. Hong, 2006 .

Structure of Sc2O3 films epitaxially grown on α-Al2O3 (0001)

J. P. Mannaerts, Sy-Hwang Liou, A. R. Kortan, 2006 .

Effect of oxidation on the magnetic properties of unprotected TbFe thin films

R. P. Frankenthal, R. V. Dover, E. Gyorgy, 1986 .

High ε gate dielectrics Gd2O3 and Y2O3 for silicon

J. P. Mannaerts, J. M. Rosamilia, Yves J. Chabal, 2000 .

An Investigation on the Enhancement of the Critical Current Densities in Bronze-Processed Nb3Sn

J. W. Morris, W. Hassenzahl, W. Gilbert, 1981 .

High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

Wilman Tsai, Tzu-Ying Lin, C. P. Chen, 2008 .

Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge

Yu-Cheng Chang, Y. J. Lee, L. K. Chu, 2009 .

Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high-κ dielectrics on Ge without interfacial layers

Y. J. Lee, L. K. Chu, J. Kwo, 2010 .

Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors

Albert G. Baca, S. J. Pearton, C. R. Abernathy, 1998 .

Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si

David A. Muller, J. P. Mannaerts, Robert L. Opila, 2001 .

Direct atomic structure determination of epitaxially grown films:Gd2O3on GaAs(100)

Edward A. Stern, Robert Clarke, Mukhles Sowwan, 2002 .

Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN

Y. J. Lee, Kuang-Li Lee, J. Kwo, 2007 .

Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

J. M. Hong, J. Kwo, C. Tsai, 2008 .

Surface passivation of III-V compound semiconductors using atomic-layer-deposition grown Al2O3

Y. J. Lee, J. Kwo, T. B. Wu, 2005 .

Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As

Yan-Kai Chiou, Tzu-Ying Lin, Kuang-Li Lee, 2006 .

Achieving 1nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As

Y. J. Lee, Kuang-Li Lee, J. Kwo, 2008 .

Energy-band parameters of atomic-layer-deposited Al$_{2}$O$_{3}$ and HfO$_{2}$ on InxGa$_{1-x}$As

J. Kwo, Y. H. Chang, M. Hong, 2009 .

III–V compound semiconductor transistors—from planar to nanowire structures

Lars-Erik Wernersson, Heike Riel, Jesus A. del Alamo, 2014 .

Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric

Peide D. Ye, J. P. Mannaerts, J. Bude, 2003 .

GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

Peide D. Ye, J. P. Mannaerts, J. Bude, 2003 .

GaN Metal Oxide Semiconductor Field Effect Transistors

Albert G. Baca, R. J. Shul, Stephen J. Pearton, 1999 .

III–V Metal–Oxide–Semiconductor Field-Effect Transistors with High κ Dielectrics

Tsung-Da Lin, J. Kwo, M. Hong, 2007 .