X. Kang

Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4

M. Van Hove, M. Germain, G. Borghs, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates

S. Decoutere, M. Van Hove, D. Wellekens, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance

S. Decoutere, D. Wellekens, S. You, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).