Michele Virgilio

发表

Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy

Michelle Y. Simmons, Eugenio Calandrini, Leonetta Baldassarre, 2014 .

Type-I alignment and direct fundamental gap in SiGe based heterostructures

Giuseppe Grosso, G. Grosso, M. Virgilio, 2006 .

Radiative and non-radiative recombinations in tensile strained Ge microstrips: Photoluminescence experiments and modeling

Yuji Yamamoto, Thomas Schroeder, Giovanni Capellini, 2015 .

Quantum-confined Stark effect in Ge/SiGe quantum wells: A tight-binding description

Giuseppe Grosso, Michele Virgilio, 2008 .

Robustness analysis of a device concept for edge-emitting lasers based on strained germanium

Marita Thomas, Subhajit Guha, Thomas Koprucki, 2016 .

Optical spin orientation in strained Ge/SiGe quantum wells: A tight-binding approach

Giuseppe Grosso, Michele Virgilio, 2009 .

Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics

Douglas J. Paul, Jacopo Frigerio, Andrea Ballabio, 2016 .

Modeling of an Edge-Emitting strained-Ge laser

Marita Thomas, Yuji Yamamoto, Lars Zimmermann, 2015 .

Radiative recombination and optical gain spectra in biaxially strained n-type germanium

Giuseppe Grosso, Giovanni Pizzi, Giovanni Capellini, 2013 .

Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

Giovanni Isella, Daniel Chrastina, Giuseppe Grosso, 2008 .