Francesco La Via

发表

SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor

Giuseppe Pistone, F. Portuese, Marco Mauceri, 2006 .

Thick Epitaxial Layers Growth by Chlorine Addition

Danilo Crippa, M. Camarda, Giuseppe Abbondanza, 2009 .

Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process

Giuseppe Pistone, F. Portuese, Fabrizio Roccaforte, 2006 .

Theoretical and experimental study of the role of cell-cell dipole interaction in dielectrophoretic devices: application to polynomial electrodes

Gianluca Giustolisi, Andrea Ballo, Giorgio Russo, 2014, Biomedical engineering online.

Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure

Fabrizio Roccaforte, Antonino La Magna, A. La Magna, 2003 .

Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results

Francesco Moscatelli, Fabrizio Roccaforte, Andrea Scorzoni, 2003 .

Study of TiW/Au Thin Films Metallization Stack for High Temperature and Harsh Environment Devices on 6H Silicon Carbide

Edoardo Zanetti, Fabrizio Roccaforte, A. Baeri, 2004 .

Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact

Massimo Zimbone, Mario Saggio, Angelo Messina, 2020 .

Ion Implantation Defects in 4H-SiC DIMOSFET

Salvo Coffa, Simona Lorenti, S. Lorenti, 2016 .