Sangheon Lee

发表

BEOL compatible (300°C) TiN/TiOx/Ta/TiN 3D nanoscale (∼10nm) IMT selector

Hyunsang Hwang, Kibong Moon, Jiyong Woo, 2013, 2013 IEEE International Electron Devices Meeting.

Steep Slope Field-Effect Transistors With Ag/TiO2-Based Threshold Switching Device

Hyunsang Hwang, Kibong Moon, Jiyong Woo, 2016, IEEE Electron Device Letters.

Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM)

Hyunsang Hwang, Behnoush Attarimashalkoubeh, Jiyong Woo, 2014 .

Resistive-switching analogue memory device for neuromorphic application

Hyunsang Hwang, Kibong Moon, Jiyong Woo, 2014, 2014 Silicon Nanoelectronics Workshop (SNW).

Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory

Hyunsang Hwang, Jiyong Woo, Euijun Cha, 2014 .

Optimized Lightning-Rod Effect to Overcome Trade-Off Between Switching Uniformity and On/Off Ratio in ReRAM

Hyunsang Hwang, Kibong Moon, Jiyong Woo, 2014, IEEE Electron Device Letters.

Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application

Hyunsang Hwang, Jiyong Woo, Euijun Cha, 2015 .

Effect of Nitrogen Doping on Variability of TaOx -RRAM for Low-Power 3-Bit MLC Applications

Hyunsang Hwang, Jaehyuk Park, Jiyong Woo, 2015 .

Highly Reliable Resistive Switching Without an Initial Forming Operation by Defect Engineering

Hyunsang Hwang, Kibong Moon, Jiyong Woo, 2013, IEEE Electron Device Letters.

Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application

Hyunsang Hwang, Jiyong Woo, Euijun Cha, 2014, IEEE Electron Device Letters.