P.G. Neudeck

Stable Electrical Operation of 6H–SiC JFETs and ICs for Thousands of Hours at 500 $^{\circ}\hbox{C}$

Liang-Yu Chen, P. Neudeck, G. Beheim, 2008, IEEE Electron Device Letters.

Performance limiting micropipe defects in silicon carbide wafers

P. Neudeck, J. Powell, P.G. Neudeck, 1994, IEEE Electron Device Letters.

Positive temperature coefficient of breakdown voltage in 4H-SiC pn junction rectifiers

C. Fazi, P. Neudeck, P.G. Neudeck, 1997, IEEE Electron Device Letters.

Wide dynamic range RF mixers using wide-bandgap semiconductors

C. Fazi, P.G. Neudeck, 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.