G.M. Beheim

发表

Stable Electrical Operation of 6H–SiC JFETs and ICs for Thousands of Hours at 500 $^{\circ}\hbox{C}$

Liang-Yu Chen, P. Neudeck, G. Beheim, 2008, IEEE Electron Device Letters.

Fracture strength of silicon carbide microspecimens

W. Sharpe, G. Beheim, G. Quinn, 2005, Journal of Microelectromechanical Systems.

Fracture Strength of Single-Crystal Silicon Carbide Microspecimens at 24 $^{\circ}\hbox{C}$ and 1000 $^{\circ}\hbox{C}$

W. Sharpe, G. Beheim, L. Evans, 2008, Journal of Microelectromechanical Systems.