J. W. Yang

发表

Low 1/f Noise in AlGaN/GaN HFETs on SiC Substrates

Michael S. Shur, Asif Khan, Grigory Simin, 1999 .

Double Channel AlGaN/GaN Heterostructure Field Effect Transistor

Michael S. Shur, Tor A. Fjeldly, Remigijus Gaska, 1998 .

Co-Doping Characteristics of Si and Zn with Mg in P-Type GaN

Gye Mo Yang, C. S. Oh, C. J. Youn, 1999 .

Exciton and carrier motion in quaternary AlInGaN

Michael S. Shur, Albertas Žukauskas, Grigory Simin, 2003 .

Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes

Michael S. Shur, Christian Kisielowski, M. Asif Khan, 1997 .

AlGaN/GaN high electron mobility field effect transistors with low 1/f noise

Michael S. Shur, Michael E. Levinshtein, Sergey L. Rumyantsev, 1998 .

Co-doping Characteristics of Si and Zn with Mg in P-type GaN

Gye Mo Yang, C. S. Oh, C. J. Youn, 2000 .

Analysis of Mg-related emissions in p-GaN grown by MOCVD

C. J. Youn, J. W. Yang, M. S. Han, 2003 .

Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors

Michael S. Shur, A. Tarakji, Alexey Koudymov, 2001 .

Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

Michael S. Shur, A. Tarakji, Alexey Koudymov, 2001 .

Screening dynamics of intrinsic electric field in AlGaN quantum wells

Michael S. Shur, Kai Liu, Gintautas Tamulaitis, 2008 .

Indium-incorporation-induced transformation of optical, photoluminescence and lasing properties of InGaN epilayers

Grigory Simin, Phil Won Yu, M. Asif Khan, 2003 .

Visible-blind ultraviolet photodetectors based on GaN p-n junctions

M. Asif Khan, M. Khan, J. Yang, 1995 .

AlGaN-based 280nm light-emitting diodes with continuous wave powers in excess of 1.5mW

Max Shatalov, Vinod Adivarahan, S. Wu, 2004 .

Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate

Michael S. Shur, Grigory Simin, M. Asif Khan, 2000 .

Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates

Asif Khan, Fernando Ponce, Vinod Adivarahan, 2006 .

Prebreakdown and breakdown effects in AlGaN/GaN heterostructure field effect transistors

Tangali S. Sudarshan, M. Asif Khan, G. Gradinaru, 1998 .

Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells

Grigory Simin, Bruce H. T. Chai, C. Q. Chen, 2002 .

High spectral uniformity of AlGaN with a high Al content evidenced by scanning near-field photoluminescence spectroscopy

Michael S. Shur, Rakesh K. Jain, Max Shatalov, 2014 .

Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes

Michael S. Shur, A. Lunev, Max Shatalov, 2008 .

Stimulated emission in AlGaN/AlGaN quantum wells with different Al content

Michael S. Shur, Albertas Žukauskas, Max Shatalov, 2012 .

Accumulation Hole Layer in p-GaN/AlGaN Heterostructures

Michael S. Shur, Grigory Simin, Remis Gaska, 2000 .

Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN

C. Q. Chen, Richard J. Molnar, M. Asif Khan, 2004 .

Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors

Michael S. Shur, Remigijus Gaska, Alexei Bykhovski, 1997 .

Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm

Grigory Simin, M. Asif Khan, Vinod Adivarahan, 2002 .

Thermal distributions of surface states causing the current collapse in unpassivated AlGaN∕GaN heterostructure field-effect transistors

C. S. Oh, C. J. Youn, J. W. Yang, 2005 .

Optical bandgap formation in AlInGaN alloys

Michael S. Shur, Albertas Žukauskas, Grigory Simin, 2000 .

Confocal spectroscopy of InGaN LED structures

Michael S. Shur, Gintautas Tamulaitis, Max Shatalov, 2011 .

Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN

Michael S. Shur, Asif Khan, C. Q. Chen, 2002 .

Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors

R. Mickevicius, Grigory Simin, Michael Shur, 2004 .

High quality GaN–InGaN heterostructures grown on (111) silicon substrates

Henryk Temkin, Andrei Osinsky, Leonid Chernyak, 1996 .

Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN

Thomas N. Jackson, M. Asif Khan, Suzanne E. Mohney, 1997 .

Low-Frequency Noise in SiO2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates

Michael S. Shur, Nezih Pala, M. Asif Khan, 2000 .

Acousto-optic diffraction of blue and red light in GaN

Michael S. Shur, Daumantas Ciplys, Romualdas Rimeika, 2002 .

Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors

Michael S. Shur, M. Asif Khan, M. Shur, 1996 .

Finite‐Temperature Band Gap Renormalization in Highly Photoexcited GaN Epilayers

Michael S. Shur, Albertas Žukauskas, Gintautas Tamulaitis, 1999 .

Indium-Silicon Co-Doping of High-Aluminum-Content AlGaN for Solar Blind Photodetectors

Michael S. Shur, Grigory Simin, Remis Gaska, 2001 .

P/He ion implant isolation technology for AlGaN/GaN HFETs

P. M. Asbeck, M. Asif Khan, G. Hanington, 1998 .

SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors

Michael S. Shur, A. Lunev, Grigory Simin, 2000 .

Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

Hong Wang, Grigory Simin, C. Q. Chen, 2002 .

Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy

Michael S. Shur, Saulius Marcinkevicius, Remigijus Gaska, 2011 .

Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures

Michael S. Shur, Wojciech Knap, Michael E. Levinshtein, 2002 .

Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power

Michael S. Shur, A. Lunev, Remigijus Gaska, 2010 .

High power RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbide substrates

John A. Higgins, Richard Pierson, Gerard J. Sullivan, 1998 .

AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA

Michael S. Shur, A. Lunev, Max Shatalov, 2004 .

Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

Michael S. Shur, Andrei Osinsky, Gregory L. Snider, 1998 .

High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells

A. Lunev, Grigory Simin, Michael Shur, 2000 .

Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy

Michael S. Shur, Max Shatalov, Saulius Marcinkevicius, 2009 .

Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth

M. Asif Khan, Saulius Jursenas, A. Žukauskas, 2004 .

Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm

Hong Wang, C. Q. Chen, M. Asif Khan, 2002 .

Lattice and energy band engineering in AlInGaN/GaN heterostructures

Michael S. Shur, David J. Smith, Grigory Simin, 2000 .

III-nitride microwave control devices and ICs

Michael S. Shur, Grigory Simin, Remigijus Gaska, 2013 .

Selective Area Deposited Blue GaN-InGaN Multiple-Quantum Well Light Emitting Diodes over Silicon Substrates

A. Lunev, Grigory Simin, Remis Gaska, 2000 .

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

Michael S. Shur, A. Tarakji, Grigory Simin, 2000 .

Study of contact formation in AlGaN/GaN heterostructures

M. Khan, J. Yang, S. Lau, 1997 .

Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells

Michael S. Shur, Grigory Simin, M. Asif Khan, 2002 .

Low-frequency noise in AlGaN'GaN heterojunction field effect transistors on SiC and sapphire substrates

Michael S. Shur, Michael E. Levinshtein, S. L. Rumyantsev, 2000 .

Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors

Michael S. Shur, Michael E. Levinshtein, Grigory Simin, 2000 .

Metal contacts to n-type GaN

Ilesanmi Adesida, M. Asif Khan, M. Khan, 1998 .

The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1−xN quantum wells

Eicke R. Weber, Piotr Perlin, Laila Mattos, 2000 .

Enhanced Luminescence in InGaN Multiple Quantum Wells with Quaternary AlInGaN Barriers

Michael S. Shur, Grigory Simin, Remis Gaska, 2000 .

Visible-blind GaN Schottky barrier detectors grown on Si(111)

R. Gaska, John F. Muth, Henryk Temkin, 1998 .

Low Frequency and Microwave Noise Characteristics of GaN and GaAs-based HFETs

Michael S. Shur, Asif Khan, Grigory Simin, 2001 .

Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates

Michael S. Shur, Andrei Osinsky, Gregory L. Snider, 1997 .

High‐Temperature Performance of AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field‐Effect‐Transistors

Michael S. Shur, A. Tarakji, Alexey Koudymov, 2001 .

High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design

Grigory Simin, M. Asif Khan, Max Shatalov, 2004 .

Surface emission of InxGa1−xN epilayers under strong optical excitation

M. Asif Khan, Hongxing Jiang, J. W. Yang, 1997 .

Electron beam induced current measurements of minority carrier diffusion length in gallium nitride

Henryk Temkin, Andrei Osinsky, Leonid Chernyak, 1996 .

Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes

Michael S. Shur, Max Shatalov, Saulius Marcinkevicius, 2010 .

AlGaN layers grown on GaN using strain-relief interlayers

Hong Wang, C. Q. Chen, M. Asif Khan, 2002 .

Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four-wave mixing technique

Michael S. Shur, V. Gudelis, Remis Gaska, 2003 .

Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors

Michael S. Shur, Grigory Simin, Sergey L. Rumyantsev, 2003 .

High temperature characteristics of Pd Schottky contacts on n-type GaN

Ilesanmi Adesida, M. Asif Khan, M. Khan, 1996 .