L.K. Bera

Three-Layer laminated metal gate electrodes with tunable work functions for CMOS applications

N. Balasubramanian, S. Mathew, H.C. Wen, 2005, IEEE Electron Device Letters.

High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

S.C. Rustagi, R. Kumar, N. Balasubramanian, 2006, IEEE Electron Device Letters.

Vertically Stacked SiGe Nanowire Array Channel CMOS Transistors

S.C. Rustagi, N. Balasubramanian, N. Singh, 2007, IEEE Electron Device Letters.

Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: Impact of Diameter, Channel-Orientation and Low Temperature on Device Performance

S.C. Rustagi, N. Balasubramanian, N. Singh, 2006, 2006 International Electron Devices Meeting.

Successful transferring of active transistors, rf-passive components and high density interconnect from bulk si to organic substrates

E.B. Liao, N. Balasubramanian, L.H. Guo, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Failure Defects Observed in Post-Breakdown High-κ/Metal Gate Stack Mosfet

S. De Gendt, R. Degraeve, G. Groeseneken, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

Drive-Current Enhancement in Ge n-Channel MOSFET Using Laser Annealing for Source/Drain Activation

Minghui Hong, Qingchun Zhang, Guoxin Chen, 2006, IEEE Electron Device Letters.

Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body

D.S.H. Chan, N. Balasubramanian, N. Singh, 2006, IEEE Electron Device Letters.

A dual-strained CMOS structure through simultaneous formation of relaxed and compressive strained-SiGe-on-insulator

R. Kumar, N. Balasubramanian, B. Abidha, 2006, IEEE Electron Device Letters.

Bendability of single-crystal Si MOSFETs investigated on flexible substrate

E.B. Liao, N. Balasubramanian, L.H. Guo, 2006, IEEE Electron Device Letters.