Sameer Joglekar

Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level Vt engineering for transconductance compensation

Daniel Piedra, Tomás Palacios, Ujwal Radhakrishna, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry

Evelyn N. Wang, Tomás Palacios, Omair I. Saadat, 2017, IEEE Transactions on Electron Devices.

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

Tomas Palacios, Tatsuya Fujishima, T. Palacios, 2013 .

Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack.

Ahmad Zubair, Tomás Palacios, Mildred Dresselhaus, 2017, Nanoscale.

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment

Daniel Piedra, Hyung-Seok Lee, Tomas Palacios, 2013 .