D. Xu

Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage

H. Kawarada, A. Hiraiwa, T. Yamada, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

Hiroshi Kawarada, Atsushi Hiraiwa, Tatsuya Saito, 2014 .