P. B. Gray

SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz fT/fMAX through reduced Rb and Ccb parasitics

V. Jain, B. Zetterlund, D. L. Harame, 2013, 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

Co-integration of high-performance and high-breakdown SiGe HBTs in a BiCMOS technology

V. Jain, D. L. Harame, P. Cheng, 2012, 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency

D. Harame, Vibhor Jain, Peng Cheng, 2013, 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

Device and circuit performance of SiGe HBTs in 130nm BiCMOS process with fT/fMAX of 250/330GHz

A. Natarajan, S. K. Reynolds, B. Sadhu, 2014, 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).