Yongxun Liu

发表

15-nm-thick Si channel wall vertical double-gate MOSFET

T. Matsukawa, H. Yamauchi, M. Masahara, 2002, Digest. International Electron Devices Meeting,.

Four-Terminal FinFETs Fabricated Using an Etch-Back Gate Separation

K. Endo, T. Matsukawa, S. O'uchi, 2007, IEEE Transactions on Nanotechnology.

Unexpected equivalent-oxide-thickness dependence of the subthreshold swing in tunnel field-effect transistors

Meishoku Masahara, Tetsuji Yasuda, A. Tanabe, 2014 .

Demonstration of Split-Gate Type Trigate Flash Memory With Highly Suppressed Over-Erase

K. Endo, T. Matsukawa, S. O'uchi, 2012, IEEE Electron Device Letters.

Fabrication of FinFETs by Damage-Free Neutral-Beam Etching Technology

K. Endo, T. Matsukawa, H. Yamauchi, 2006, IEEE Transactions on Electron Devices.

Variability Analysis of TiN Metal-Gate FinFETs

Hiromi Yamauchi, Kunihiro Sakamoto, Takashi Matsukawa, 2010, IEEE Electron Device Letters.

Advanced FinFET CMOS Technology: TiN-Gate, Fin-Height Control and Asymmetric Gate Insulator Thickness 4T-FinFETs

K. Endo, T. Matsukawa, S. O'uchi, 2006, 2006 International Electron Devices Meeting.

High density electrical feedthrough fabricated by deep reactive ion etching of Pyrex glass

M. Esashi, T. Abe, M. Esashi, 2001, Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090).

Fluctuation Analysis of Parasitic Resistance in FinFETs With Scaled Fin Thickness

K. Endo, T. Matsukawa, S. O'uchi, 2009, IEEE Electron Device Letters.

Demonstration and Analysis of Accumulation-Mode Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor

Kenichi Ishii, Takashi Matsukawa, Meishoku Masahara, 2006 .

Metal-Gate FinFET Variation Analysis by Measurement and Compact Model

K. Endo, T. Matsukawa, H. Yamauchi, 2009, IEEE Electron Device Letters.

Dual metal gate FinFET integration by Ta/Mo diffusion technology for Vt reduction and multi-Vt CMOS application

Hiromi Yamauchi, Kunihiro Sakamoto, Kenichi Ishii, 2008 .

Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE)

Kenichi Ishii, Takashi Matsukawa, Meishoku Masahara, 2003 .

Optimum Gate Workfunction for $V_{\rm th}$-Controllable Four-Terminal-Driven Double-Gate MOSFETs (4T-XMOSFETs)—Band-Edge Workfunction Versus Midgap Workfunction

K. Endo, T. Matsukawa, S. O'uchi, 2006, IEEE Transactions on Nanotechnology.

Dual metal gate FinFET integration by Ta/Mo diffusion technology for Vt reduction and multi-Vt CMOS application

K. Endo, T. Matsukawa, S. O'uchi, 2008, ESSDERC 2008 - 38th European Solid-State Device Research Conference.

Comprehensive analysis of Ion variation in metal gate FinFETs for 20nm and beyond

Hiromi Yamauchi, Kunihiro Sakamoto, Takashi Matsukawa, 2011, 2011 International Electron Devices Meeting.

Variability Analysis of Scaled Crystal Channel and Poly-Si Channel FinFETs

K. Endo, T. Matsukawa, S. O'uchi, 2012, IEEE Transactions on Electron Devices.

Fabrication and Characterization of NOR-Type Tri-Gate Flash Memory with Improved Inter-Poly Dielectric Layer by Rapid Thermal Oxidation

Hiromi Yamauchi, Kunihiro Sakamoto, T. Hayashida, 2012 .

Suppressing Vt and Gm variability of FinFETs using amorphous metal gates for 14 nm and beyond

K. Endo, T. Matsukawa, S. O'uchi, 2012, 2012 International Electron Devices Meeting.

Fabrication and characterization of vertical-type, self-aligned asymmetric double-gate metal-oxide-semiconductor field-effect-transistors

Kunihiro Sakamoto, Kenichi Ishii, Takashi Matsukawa, 2005 .

Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography

Kenichi Ishii, H. Takashima, Toshiyuki Tsutsumi, 2003 .

Tunnel Field-Effect Transistors with Extremely Low Off-Current Using Shadowing Effect in Drain Implantation

Kunihiro Sakamoto, Meishoku Masahara, Tetsuji Yasuda, 2011 .

Independent-gate four-terminal FinFET SRAM for drastic leakage current reduction

K. Endo, T. Matsukawa, H. Yamauchi, 2008, 2008 IEEE International Conference on Integrated Circuit Design and Technology and Tutorial.

Independent double-gate FinFET SRAM technology

Takashi Matsukawa, Meishoku Masahara, Kazuhiko Endo, 2011 .