G. S. Jackson

发表

Room‐temperature continuous operation of p‐n AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si

Hisashi Shichijo, Dennis G. Deppe, Richard J. Matyi, 1987 .

High-power gain-guided coupled-stripe quantum well laser array by hydrogenation

G. Stillman, N. Holonyak, D. Hall, 1988 .

Carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition using carbon tetrachloride as a dopant source

Brian T. Cunningham, G. E. Stillman, G. S. Jackson, 1990 .

Mode‐locked coupled‐stripe quantum well laser operation (λ∼7350 Å) in a tunable (Δℏω∼37 meV>kT) external grating cavity

N. Holonyak, R. Burnham, J. Epler, 1985 .

Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−y source

Thomas L. Paoli, Robert D. Burnham, Robert L. Thornton, 1987 .

Single‐mode single‐lobe operation of broad area AlxGa1−xAs‐GaAs quantum well lasers

N. Holonyak, D. Deppe, R. Burnham, 1986 .

Broadband operation of coupled‐stripe multiple quantum well AlGaAs laser diodes

N. Holonyak, R. Burnham, J. Epler, 1985 .

Photoluminescence and stimulated emission in Si‐ and Ge‐disordered AlxGa1−xAs‐GaAs superlattices

N. Holonyak, R. Kaliski, K. Hsieh, 1985 .

Supermode behavior of coupled two‐stripe AlxGa1−xAs‐GaAs quantum‐well heterostructure lasers

N. Holonyak, R. Burnham, J. Epler, 1987 .

Reduced temperature sensitivity AlxGa1−xAs‐GaAs quantum well lasers with (Si2)x(GaAs)1−x ‘‘barriers’’

N. Holonyak, D. Deppe, R. Burnham, 1986 .

Coupled stripe AlxGa1−xAs‐GaAs quantum well lasers defined by impurity‐induced (Si) layer disordering

N. Holonyak, D. Deppe, R. Burnham, 1987 .

Impurity‐induced layer‐disordered buried heterostructure AlxGa1−xAs‐GaAs quantum well edge‐injection laser array

N. Holonyak, D. Deppe, R. Burnham, 1987 .

Si delta-doped field-effect transistors by atmospheric pressure metalorganic chemical vapor deposition

G. S. Jackson, N. Pan, J. Carter, 1991 .

Carbon‐doped AlxGa1−xAs‐GaAs quantum well lasers

N. Holonyak, D. Hall, G. S. Jackson, 1988 .

Optimization of buffer layers for AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors by atmospheric pressure metalorganic chemical vapor deposition

G. S. Jackson, S. Brierley, N. Pan, 1992 .

Damaged and damage‐free hydrogenation of GaAs: The effect of reactor geometry

N. Holonyak, M. Feng, K. Hsieh, 1988 .

Hydrogenation of GaAs and Application to Device processing

G. Stillman, N. Holonyak, M. Feng, 1988 .

Stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers via hydrogenation

G. Stillman, N. Holonyak, M. Feng, 1987 .

Graded InGaP Schottky diodes on Si‐doped InP

C. Wu, K. Hsieh, D. Lee, 1992 .

Anomalous threshold current and time delays in index-guided AlxGa1−xAs-GaAs quantum-well lasers

N. Holonyak, J. Epler, K. Hsieh, 1987 .