Takashi Kobayashi

发表

Systematic Study of Insulator Deposition Effect (Si3N4, SiO2, AlN, and Al2O3) on Electrical Properties in AlGaN/GaN Heterostructures

Takatomo Enoki, Toshiki Makimoto, Noriyuki Watanabe, 2007 .

Contributions of a Higher Triplet Excited State to the Emission Properties of a Thermally Activated Delayed-Fluorescence Emitter

Chihaya Adachi, Hiroyoshi Naito, Takashi Nagase, 2017 .

A 64-GHz f/sub T/ and 3.6-V BV/sub CEO/ Si bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts

M. Tanabe, Y. Tamaki, Takashi Kobayashi, 1993 .

Small Integrated Optical Head Device Using a Blue-Violet Laser Diode for Blu-ray Disc System

Masao Ikeda, Noriaki Nishi, Tsuyoshi Tojyo, 2003 .

C-doped GaAsSb base HBT without hydrogen passivation grown by MOVPE

Kenji Kurishima, Noriyuki Watanabe, Yasuhiro Oda, 2004 .

Optical memory characteristics of solution-processed organic transistors with self-organized organic floating gates for printable multi-level storage devices

Hiroyoshi Naito, Takashi Nagase, H. Naito, 2019, Organic Electronics.

Improvement of current gain of C-doped GaAsSb-base heterojunction bipolar transistors by using an InAlP emitter

Kenji Kurishima, Noriyuki Watanabe, Haruki Yokoyama, 2005 .

Electrical properties and device characteristics of InAlN/AlGaN/ AlN/GaN heterostructure field effect transistors

Masanobu Hiroki, Narihiko Maeda, Takashi Kobayashi, 2009 .

Hetero-emitter-like characteristics of phosphorus doped polysilicon emitter transistors. Part I: band structure in the polysilicon emitter obtained from electrical measurements

Y. Tamaki, Y. Tamaki, M. Kondo, 1995 .

Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistors

Tadao Ishibashi, Kenji Kurishima, Hiroki Nakajima, 1994 .

Annealing effect on C-doped InGaAs grown by metalorganic chemical vapor deposition

Shoji Yamahata, Noriyuki Watanabe, Takashi Kobayashi, 1998 .

In-situ etching by CBr_4 in InP heterojunction bipolar transistors with buried SiO_2 wire

Naoaki Takebe, Yasuyuki Miyamoto, Takashi Kobayashi, 2009 .

A 0.5- mu m very-high-speed silicon bipolar devices technology U-groove-isolated SICOS

Yoichi Tamaki, Tokuo Kure, Takeo Shiba, 1991 .

Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers

Hideaki Matsuzaki, Hiroki Sugiyama, Takatomo Enoki, 2005 .

Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers

Hideaki Matsuzaki, Hiroki Sugiyama, Takatomo Enoki, 2005 .

Photoluminescence in a Thermally Activated Delayed Fluorescence Emitter for Organic Light-emitting Diodes

Chihaya Adachi, Hiroyoshi Naito, Takashi Nagase, 2016 .

Suppression of hydrogen passivation in carbon-doped GaAsSb grown by MOCVD

Noriyuki Watanabe, Haruki Yokoyama, Yasuhiro Oda, 2004 .

Room-temperature single-electron memory

Kazuo Yano, Fumio Murai, Koichi Seki, 1994 .

A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology

Tokuo Kure, M. Tanabe, S. Iijima, 1991, International Electron Devices Meeting 1991 [Technical Digest].

Enhancement of f/sub max/ in InP/InGaAs HBTs by selective MOCVD growth of heavily-doped extrinsic base regions

Hiroshi Ito, Shoji Yamahata, Kenji Kurishima, 1996 .

Determination of Charge-Carrier Mobility in Organic Light-Emitting Diodes by Impedance Spectroscopy in Presence of Localized States

Hiroyoshi Naito, Takashi Nagase, Takayuki Okachi, 2008 .

Internal voltage generator for low voltage, quarter-micrometer flash memories

S. Saeki, Takayuki Kawahara, Katsutaka Kimura, 1998 .

Temperature dependence of photoluminescence properties in a thermally activated delayed fluorescence emitter

Chihaya Adachi, Hiroyoshi Naito, Takashi Nagase, 2014 .

Ultra-high f/sub max/ and f/sub T/ InP/InGaAs double-heterojunction bipolar transistors with step-graded InGaAsP collector

Kenji Kurishima, Hiroki Nakajima, S. Yamahata, 1994, Proceedings of 1994 IEEE GaAs IC Symposium.

A room-temperature single-electron memory device using fine-grain polycrystalline silicon

Kazuo Yano, Fumio Murai, Koichi Seki, 1993, Proceedings of IEEE International Electron Devices Meeting.

Transport characteristics of polycrystalline‐silicon wire influenced by single‐electron charging at room temperature

Kazuo Yano, Fumio Murai, Koichi Seki, 1995 .

Effects of a Compositionally-Graded InxGa1-xAs Base in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar Transistors

Shoji Yamahata, Kenji Kurishima, Hiroki Nakajima, 1995 .

Control of the Singlet–Triplet Energy Gap in a Thermally Activated Delayed Fluorescence Emitter by Using a Polar Host Matrix

Chihaya Adachi, Hiroyoshi Naito, Takashi Nagase, 2017, Nanoscale Research Letters.