Haruhiro Oigawa

A Model to Explain the Effective Passivation of the GaAs Surface by (NH4)2Sx Treatment

Atsushi Koma, Y. Nannichi, A. Koma, 1988 .

The Effect of (NH4)2S Treatment on the Interface Characteristics of GaAs MIS Structures

Y. Nannichi, Yasuo Nannichi, Jia-Fa Fan, 1988 .

A Model to Explain the Effective Passivation of the GaAs Surface by (NH_4)_2S_x Treatment : Semiconductors and Semiconductor Devices

Atsushi Koma, Yasuo Nannichi, Jia-Fa Fan, 1988 .

Optical pump-probe scanning tunneling microscopy for probing ultrafast dynamics on the nanoscale

Osamu Takeuchi, Hidemi Shigekawa, Shoji Yoshida, 2013 .

Bonding states of chemisorbed sulfur atoms on GaAs

Masaharu Oshima, Hirohiko Sugahara, M. Oshima, 1991 .