Y. P. Hsu

InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering

Yan-Kuin Su, Shoou-Jinn Chang, S. C. Chen, 2003 .

Si and Zn co-doped InGaN-GaN white light-emitting diodes

Jinn-Kong Sheu, Yan-Kuin Su, Wei-Chih Lai, 2003 .

In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer

Jinn-Kong Sheu, Yan-Kuin Su, Long Wu, 2003 .

Improved ESD reliability by using a modulation doped Al/sub 0.12/Ga/sub 0.88/N/GaN superlattice in nitride-based LED

Yan-Kuin Su, Shoou-Jinn Chang, J. Sheu, 2003, International Semiconductor Device Research Symposium, 2003.

High brightness InGaN green LEDs with an ITO on n/sup ++/-SPS upper contact

Yan-Kuin Su, Shoou-Jinn Chang, H. M. Lo, 2003 .

ICP etching of sapphire substrates

Jinn-Kong Sheu, Yan-Kuin Su, Shoou-Jinn Chang, 2005 .

InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates

Yan-Kuin Su, Shoou-Jinn Chang, Cheng-Huang Kuo, 2003 .