Q. Chen

发表

High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor

I. Adesida, M.A. Khan, M. Shur, 1998, IEEE Electron Device Letters.

DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates

I. Adesida, M.A. Khan, J. Yang, 1998, IEEE Electron Device Letters.

High-power 10-GHz operation of AlGaN HFET's on insulating SiC

J. Yang, R. Pierson, G. Sullivan, 1998, IEEE Electron Device Letters.

High-temperature performance of AlGaN/GaN HFETs on SiC substrates

R. Gaska, J. Yang, M. Asif Khan, 1997, IEEE Electron Device Letters.

Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

M.A. Khan, M. Shur, J. Yang, 1996, IEEE Electron Device Letters.

P/He ion implant isolation technology for AlGaN/GaN HFETs

P. M. Asbeck, M. Asif Khan, G. Hanington, 1998 .

Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias

Michael S. Shur, M. Shur, M. Khan, 1994 .

High power RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbide substrates

John A. Higgins, Richard Pierson, Gerard J. Sullivan, 1998 .

CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz

M. Asif Khan, M. Shur, L. Eastman, 1996, IEEE Electron Device Letters.

Study of contact formation in AlGaN/GaN heterostructures

M. Khan, J. Yang, S. Lau, 1997 .

Gated photodetector based on GaN/AlGaN heterostructure field effect transistor

Michael S. Shur, M. Shur, M. Khan, 1995 .

Two-dimensional electron gas in AlGaN/GaN heterostructures

Hongxing Jiang, M. Khan, J. Lin, 1997 .

Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells

Hadis Morkoç, Andrei Botchkarev, Hongxing Jiang, 1997 .