N. Iguchi

First demonstration of logic mapping on nonvolatile programmable cell using complementary atom switch

N. Banno, M. Tada, T. Sakamoto, 2012, 2012 International Electron Devices Meeting.

Highly scalable nonvolatile TiOx/TaSiOy solid-electrolyte crossbar switch integrated in local interconnect for low power reconfigurable logic

N. Kasai, N. Banno, M. Tada, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Robust Cu atom switch with over-400°C thermally tolerant polymer-solid electrolyte (TT-PSE) for nonvolatile programmable logic

N. Banno, M. Tada, T. Sakamoto, 2016, 2016 IEEE Symposium on VLSI Technology.

Highly reliable, complementary atom switch (CAS) with low programming voltage embedded in Cu BEOL for Nonvolatile Programmable Logic

N. Banno, M. Tada, T. Sakamoto, 2011, 2011 International Electron Devices Meeting.

Improved reliability and switching performance of atom switch by using ternary Cu-alloy and RuTa electrodes

N. Banno, M. Tada, T. Sakamoto, 2012, 2012 International Electron Devices Meeting.

A low-power Cu atom switch programmable logic fabricated in a 40nm-node CMOS technology

N. Banno, M. Tada, T. Sakamoto, 2017, 2017 Symposium on VLSI Technology.

Nonvolatile solid-electrolyte switch embedded into Cu interconnect

N. Banno, M. Tada, T. Sakamoto, 2006, 2009 Symposium on VLSI Technology.

A novel two-varistors (a-Si/SiN/a-Si) selected complementary atom switch (2V-1CAS) for nonvolatile crossbar switch with multiple fan-outs

N. Banno, M. Tada, T. Sakamoto, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).