S. Yamada

Degradation mechanism of flash EEPROM programming after program/erase cycles

Kuniyoshi Yoshikawa, Y. Hiura, Y. Ohshima, 1993, Proceedings of IEEE International Electron Devices Meeting.

A hot hole-induced low-level leakage current in thin silicon dioxide films

Naohiro Matsukawa, H. Hazama, K. Amemiya, 1996 .

A new flash-erase EEPROM cell with a sidewall select-gate on its source side

Shinji Taguchi, Makoto Wada, K. Naruke, 1989, International Technical Digest on Electron Devices Meeting.

Non-uniform current flow through thin oxide after Fowler-Nordheim current stress

H. Hazama, K. Amemiya, S. Yamada, 1996, Proceedings of International Reliability Physics Symposium.

A self-convergence erase for NOR flash EEPROM using avalanche hot carrier injection

K. Naruke, K. Amemiya, S. Yamada, 1996 .

Novel 0.44 /spl mu/m/sup 2/ Ti-salicide STI cell technology for high-density NOR flash memories and high performance embedded application

M. Kurata, S. Mori, K. Isobe, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

A self-convergence erasing scheme for a simple stacked gate flash EEPROM

Masamitsu Oshikiri, Kiyomi Naruke, Etsushi Obi, 1991, International Electron Devices Meeting 1991 [Technical Digest].