Anwar Manzoor Rana

Improved Endurance and Resistive Switching Stability in Ceria Thin Films Due to Charge Transfer Ability of Al Dopant.

Debashis Panda, Nazar Abbas Shah, Muhammad Ismail, 2016, ACS applied materials & interfaces.

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Muhammad Imran, Muhammad Ismail, M. Imran, 2017, Scientific Reports.

Characterization of e-beam evaporated hafnium oxide thin films on post thermal annealing

M. Y. Nadeem, M. Ramzan, M. Ramzan, 2013 .

Role of tantalum nitride as active top electrode in electroforming-free bipolar resistive switching behavior of cerium oxide-based memory cells

M. Y. Nadeem, Muhammad Ismail, Ejaz Ahmed, 2015 .

A first-principles study of Cu and Al doping in ZrO2 for RRAM device applications

Sungjun Kim, M. A. Sattar, Muhammad Imran, 2019, Vacuum.

Characterization of rf-sputtered indium tin oxide thin films

M. T. Bhatti, A. M. Rana, Anwar Manzoor Rana, 2004 .

Coexistence of bipolar and unipolar resistive switching in Al-doped ceria thin films for non-volatile memory applications

Muhammad Ismail, E. Ahmed, M. Ismail, 2015 .