S.-M.J. Liu

A 60-GHz high efficiency monolithic power amplifier using 0.1-μm PHEMT's

W.F. Kopp, Seng-Woon Chen, P.M. Smith, 1995 .

Determination of equivalent network parameters of short-gate-length modulation-doped field-effect transistors

M. B. Das, S. Liu, S. Fu, 1990 .

Determination of source and drain series resistances of ultra-short gate-length MODFETs

S.-M.J. Liu, M.B. Das, S.-T. Fu, 1989, IEEE Electron Device Letters.

Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10-2to 108Hz

H. Morkoc, W.F. Kopp, Chin-Kun Peng, 1986, IEEE Transactions on Electron Devices.

W-band high efficiency InP-based power HEMT with 600 GHz fmax

P. Ho, P.M. Smith, P. Ho, 1995 .

Comparison of carrier velocity in 0.25 mu m gate-length conventional, pseudomorphic, and lattice-matched modulation-doped FETs at 300 K and 77 K

P. C. Chao, J. M. Ballingall, M. B. Das, 1989, Proceedings of the Workshop on Low Temperature Semiconductor Electronics,.