H. C. Kuo

188 GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs

Milton Feng, G. E. Stillman, Z. Tang, 2000 .

Efficiency enhancement in single junction ingap solar cells by using self-assembled nanospheres

Peichen Yu, Y. L. Tsai, P. Yu, 2010, 2010 35th IEEE Photovoltaic Specialists Conference.

Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes

C. H. Wang, D. W. Lin, S. C. Wang, 2011, IEEE Electron Device Letters.

Conversion Efficiency Enhancement of GaN/In$_{0.11}$Ga$_{0.89}$N Solar Cells With Nano Patterned Sapphire and Biomimetic Surface Antireflection Process

P. Yu, H. Kuo, H. C. Chen, 2011, IEEE Photonics Technology Letters.

High speed (>13 GHz) modulation of 850 nm vertical cavity surface emitting lasers (VCSELs) with tapered oxide confined layer

Hsing-Cheng Yu, Chia-Pin Sung, Fang-I Lai, 2005 .

Lasing in metal-coated GaN nano-stripe at room temperature

C. C. Chen, Y. G. Wang, H. Kuo, 2011, CLEO: 2011 - Laser Science to Photonic Applications.

p‐type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 μm

Milton Feng, Yun-Chorng Chang, D. A. Ahmari, 1996 .

Effect of the Thermal Characteristics of Phosphor for the Conformal and Remote Structures in White Light-Emitting Diodes

C. H. Wang, H. Kuo, M. Shih, 2013, IEEE Photonics Journal.