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Understanding The Role Of Defects In Limiting The Minority Carrier Lifetime In Sic

Ajeet Rohatgi, Richard K. Ahrenkiel, Dean H. Levi, 1997 .

S-band operation of SiC power MESFET with 20 W (4.4 W/mm) output power and 60% PAE

A.W. Morse, P.M. Esker, G. Augustine, 2004, IEEE Transactions on Electron Devices.

High efficiency operation of 6-H SiC MESFETs at 6 GHz

S. Sriram, Richard H. Hopkins, P. A. Orphanos, 1995, 1995 53rd Annual Device Research Conference Digest.

SiC electronics

S. Sriram, A.W. Morse, P.M. Esker, 1996, International Electron Devices Meeting. Technical Digest.

4H-SiC MESFET's with 42 GHz f/sub max/

S. Sriram, P. A. Orphanos, T.J. Smith, 1996, IEEE Electron Device Letters.