Fan Ren

Rishabh Mehandru, Stephen J. Pearton, W. S. Hobson, 2002, Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611).

Effect of buffer layer structure on electrical and structural properties of AlGaN/GaN high electron mobility transistors

Yu Cao, Stephen J. Pearton, N. B. Smirnov, 2012 .

GaN PN junction issues and developments

Stephen J. Pearton, Andrew M. Wowchak, C. R. Abernathy, 2000 .

pH measurements with single ZnO nanorods integrated with a microchannel

David P. Norton, Stephen J. Pearton, Young-Woo Heo, 2005 .

TiAlNiAu contacts for ultrathin AlN/GaN high electron mobility transistor structures

Amir Dabiran, Lin Zhou, S. J. Pearton, 2010 .

Electrical properties and defect states in undoped high-resistivity GaN films used in high-power rectifiers

Stephen J. Pearton, N. B. Smirnov, A. V. Govorkov, 2000 .

GaN/AlGaN HBT fabrication

Albert G. Baca, R. F. Kopf, R. J. Shul, 2000 .

Zika virus detection using antibody-immobilized disposable cover glass and AlGaN/GaN high electron mobility transistors

Ivan I. Kravchenko, S. J. Pearton, Michael A. Mastro, 2018, Applied Physics Letters.

Effect of Drain Bias on Degradation of AlGaN/GaN High Electron Mobility Transistors under X-Band Operation

Stephen J. Pearton, Glen D. Via, Fan Ren, 2011 .

Efficient spin relaxation in InGaN∕GaN and InGaN∕GaMnN quantum wells: An obstacle to spin detection

Guan-Ting Chen, Stephen J. Pearton, Irina Buyanova, 2005 .

Comparison of dc performance of Pt/Ti/Au- and Ni/Au-Gated AlGaN/GaN High Electron Mobility Transistors

Yu Cao, Ivan I. Kravchenko, Stephen J. Pearton, 2011 .

Selective Detection of Hg"II… Ions from Cu"II… and Pb"II… Using AlGaN/GaN High Electron Mobility Transistors

Amir Dabiran, Yiider Tseng, S. J. Pearton, 2007 .

Extremely High Etch Rates of In‐Based III‐V Semiconductors in BCl3 / N 2 Based Plasma

S. J. Pearton, Melanie W. Cole, W. S. Hobson, 1996 .

UV ozone treatment for improving contact resistance on graphene

Ivan I. Kravchenko, Stephen J. Pearton, Ji Hyun Kim, 2012 .

Gd2O3/GaN metal-oxide-semiconductor field-effect transistor

S. J. Pearton, Brent P. Gila, Tzer-En Nee, 2000 .

TOPICAL REVIEW: GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

Jenshan Lin, S. J. Pearton, Brent P. Gila, 2004 .

Proton irradiation effects on AlN/GaN high electron mobility transistors

Amir Dabiran, Lin Zhou, David J. Smith, 2010 .

Inductively coupled plasma-induced etch damage of GaN p-n junctions

Albert G. Baca, R. J. Shul, Stephen J. Pearton, 2000 .

Synthesis and microstructure of vertically aligned ZnO nanowires grown by high-pressure-assisted pulsed-laser deposition

David P. Norton, Stephen J. Pearton, L. C. Tien, 2008 .

Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO

Sheng-Lyang Jang, David P. Norton, Hung-Ta Wang, 2007 .

Fast Detection of Perkinsus Marinus, a Prevalent Pathogen of Oysters and Clams from Sea Waters

Stephen J. Pearton, K. H. Chen, Byung Hwan Chu, 2009 .

Radiation Effects in GaN-Based High Electron Mobility Transistors

Stephen J. Pearton, Fan Ren, Ya-Shi Hwang, 2015 .

Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors

Guan-Ting Chen, Mark Sheplak, Stephen J. Pearton, 2003 .

Interface dependent electrical properties of amorphous InGaZnO4 thin film transistors

Valentin Craciun, S. J. Pearton, David P. Norton, 2009 .

High breakdown voltage Au/Pt/GaN Schottky diodes

Stephen J. Pearton, Gou-Chung Chi, R. G. Wilson, 2000 .

High-Performance Indium Gallium Zinc Oxide Transparent Thin-Film Transistors Fabricated by Radio-Frequency Sputtering

David P. Norton, Ivan I. Kravchenko, Stephen J. Pearton, 2008 .

10 Gbit/s high sensitivity low error rate decision circuit implemented with C-doped AlGaAs/GaAs HBTs

R. F. Kopf, R. N. Nottenburg, Stephen J. Pearton, 1991 .

Detection of hydrogen with SnO2-coated ZnO nanorods

S. J. Pearton, David P. Norton, Hung-Ta Wang, 2007 .

High Current, Common‐Base GaN ‐ AIGaN Heterojunction Bipolar Transistors

S. J. Pearton, Andrew M. Wowchak, Peter P. Chow, 1999 .

Pt-coated InN nanorods for selective detection of hydrogen at room temperature

Hung-Ta Wang, Stephen J. Pearton, Travis J. Anderson, 2005 .

Low Temperature Silicon Nitride and Silicon Dioxide Film Processing by Inductively Coupled Plasma Chemical Vapor Deposition

Stephen J. Pearton, D. D. Johnson, J. W. Lee, 2000 .

Effect of inductively coupled plasma damage on performance of GaN–InGaN multiquantum-well light-emitting diodes

Sang Youn Han, Stephen J. Pearton, F. Ren, 2005 .

Hydrogen-selective sensing at room temperature with ZnO nanorods

Jenshan Lin, David P. Norton, Hung-Ta Wang, 2005 .

Wet and dry etching of Sc2O3

S. J. Pearton, Brent P. Gila, K. P. Lee, 2001 .

Y-gate submicron gate length GaAs metal-semiconductor field effect transistors

S. J. Pearton, C. R. Abernathy, J. R. Lothian, 1993 .

A review of Ga2O3 materials, processing, and devices

Stephen J. Pearton, Michael A. Mastro, Marko J. Tadjer, 2018 .

Selective-hydrogen sensing at room temperature with Pt-coated InN nanobelts

Stephen J. Pearton, Brent P. Gila, Wei-Ta Lai, 2008 .

AlGaN/GaN High Electron Mobility Transistor Based Sensors for Environmental and Bio-Applications

Amir Dabiran, Nancy D. Denslow, Stephen J. Pearton, 2010 .

Dry etching of thin-film InN, AlN and GaN

Stephen J. Pearton, C. R. Abernathy, J. R. Lothian, 1993 .

High-quality InP nanoneedles grown on silicon

Connie J. Chang-Hasnain, C. Chang-Hasnain, F. Ren, 2013 .

Low Hg(II) ion concentration electrical detection with AlGaN/GaN high electron mobility transistors

Amir Dabiran, Andrei Osinsky, Stephen J. Pearton, 2008 .

Robust detection of hydrogen using differential AlGaN∕GaN high electron mobility transistor sensing diodes

Changzhi Li, Amir Dabiran, Jenshan Lin, 2006 .

Carbon nanotube films for room temperature hydrogen sensing

Stephen J Pearton, Hung-Ta Wang, Zhuangchun Wu, 2005, Nanotechnology.

Detection of C 2 H 4 Using Wide-Bandgap Semiconductor Sensors AlGaN/GaN MOS Diodes and Bulk ZnO Schottky Rectifiers

David P. Norton, Stephen J. Pearton, Brent P. Gila, 2004 .

Comparison of dry etch damage in GaAs/AlGaAs heterojunction bipolar transistors exposed to ECR and ICP Ar plasmas

Stephen J. Pearton, J. W. Lee, Randy J. Shul, 1998 .

Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors

Albert G. Baca, S. J. Pearton, C. R. Abernathy, 1998 .

Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors

Liu Lu, Stephen J. Pearton, P. G. Whiting, 2013 .

Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate

Byoung Sam Kang, Stephen J Pearton, Byung Hwan Chu, 2010, Journal of diabetes science and technology.

Fast electrical detection of Hg(II) ions with AlGaN∕GaN high electron mobility transistors

John C. Roberts, Yiider Tseng, Hung-Ta Wang, 2007 .

Detection of halide ions with AlGaN∕GaN high electron mobility transistors

Amir Dabiran, Andrei Osinsky, Stephen J. Pearton, 2005 .

Plasma etching of III–V semiconductors in BCl3 chemistries: Part II: InP and related compounds

S. J. Pearton, W. S. Hobson, C. R. Abernathy, 1997 .

Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors

Jenshan Lin, Stephen J. Pearton, Brent P. Gila, 2005 .

Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors

Rishabh Mehandru, S. J. Pearton, Brent P. Gila, 2004 .

Modeling Proton Irradiation in AlGaN/GaN HEMTs: Understanding the Increase of Critical Voltage

Mark E. Law, Stephen J. Pearton, Erin Patrick, 2013, IEEE Transactions on Nuclear Science.

SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

Amir Dabiran, Stephen J. Pearton, Peter P. Chow, 2012 .

Optical emission end point detection for via hole etching in InP and GaAs power device structures

Stephen J. Pearton, C. R. Abernathy, F. Ren, 1994 .

Comparison of electrical and reliability performances of TiB2-, CrB2-, and W2B5-based Ohmic contacts on n-GaN

S. J. Pearton, Ivan I. Kravchenko, F. Ren, 2006 .

ZnO-Based Cyclodextrin Sensor Using Immobilized Polydiacetylene Vesicles

Stephen J. Pearton, Jun-Il Kim, Dong June Ahn, 2007 .

AlGaN/GaN high electron mobility transistor structures for pressure and pH sensing

Guan-Ting Chen, Mark Sheplak, Rishabh Mehandru, 2005 .

Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes

Stephen J. Pearton, Brent P. Gila, C. R. Abernathy, 2003 .

Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit

Stephen J. Pearton, Akito Kuramata, Marko J. Tadjer, 2018 .

Characterization of bulk GaN rectifiers for hydrogen gas sensing

Hung-Ta Wang, Stephen J. Pearton, Lars Voss, 2005 .

Design and Fabrication of GaN High Power Rectifiers

S. S. Park, Stephen J. Pearton, S. K. Lee, 2005 .

Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors

Lin Zhou, Stephen J. Pearton, David J. Smith, 2011 .

Surface and bulk thermal annealing effects on ZnO crystals

Valentin Craciun, David P. Norton, Stephen J. Pearton, 2008 .

Room-Temperature Hydrogen-Selective Sensing Using Single Pt-Coated ZnO Nanowires at Microwatt Power Levels

Jenshan Lin, David P. Norton, Stephen J. Pearton, 2005 .

Improvement of Off-State Stress Critical Voltage by Using Pt-Gated AlGaN/GaN High Electron Mobility Transistors

Yu Cao, Ivan I. Kravchenko, Stephen J. Pearton, 2011 .

Contributions of surface topography and cytotoxicity to the macrophage response to zinc oxide nanorods.

Benjamin G Keselowsky, Byung Hwan Chu, F. Ren, 2010, Biomaterials.

Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers

S. S. Park, Stephen J. Pearton, A. P. Zhang, 2002 .

Carrier concentration dependence of Ti/Al/Pt/Au contact resistance on n-type ZnO

David P. Norton, Stephen J. Pearton, Young-Woo Heo, 2004 .

Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs

Rishabh Mehandru, Stephen J. Pearton, S. Bates, 2001 .

Effects of high dose proton irradiation on the electrical performance of ZnO Schottky diodes

Richard Wilkins, David P. Norton, Stephen J. Pearton, 2004 .

Gate-Lag in AlGaN/GaN High Electron Mobility Transistors: A Model of Charge Capture

S. J. Pearton, N. B. Smirnov, F. Ren, 2017 .

Hydrogen-sensitive GaN Schottky diodes

Stephen J. Pearton, Brent P. Gila, Gilyong Chung, 2003 .

Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS

S. J. Pearton, Jihyun Kim, Marko Tadjer, 2018, Journal of Applied Physics.

Mixing characteristics of InGaAs metal–semiconductor–metal photodetectors with Schottky enhancement layers

Keith Aliberti, Peter G. Newman, Barry L. Stann, 2003 .

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors

Ivan I. Kravchenko, Stephen J. Pearton, Dennis E. Walker, 2013 .

Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors

Ivan I. Kravchenko, Stephen J. Pearton, Ji Hyun Kim, 2013 .

Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length

Leonid Chernyak, Stephen J. Pearton, Elena Flitsiyan, 2018 .

Use of 370 nm UV light for selective-area fibroblast cell growth

S. J. Pearton, David P. Norton, B. S. Kang, 2005 .

Fabrication of Y‐gate, submicron gate length GaAs metal–semiconductor field effect transistors

S. J. Pearton, C. R. Abernathy, J. R. Lothian, 1993 .

Pd-catalyzed hydrogen sensing with InN nanobelts

Stephen J. Pearton, Brent P. Gila, Wei-Ta Lai, 2009 .

Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE

Amir Dabiran, Joel R. Wendt, C. Monier, 2001 .

1.55 μm Er-doped GaN LED

Jagadeesh Pamulapati, S. J. Pearton, John M. Zavada, 1999 .

Photoluminescence and x‐ray photoelectron spectroscopy study of S‐passivated InGaAs(001)

D. N. Buckley, Robert A. Bartynski, F. Ren, 1996 .

Gas, Chemical and Biological Sensing with ZnO

David P. Norton, Young-Woo Heo, F. Ren, 2006 .

Vertical and lateral GaN rectifiers on free-standing GaN substrates

S. S. Park, Stephen J. Pearton, Yong Jo Park, 2001 .

Review of radiation damage in GaN-based materials and devices

Stephen J. Pearton, Ji Hyun Kim, J. Kim, 2013 .

Charge carrier and spin doping in ZnO thin films

David P. Norton, J. M. Erie, Stephen J. Pearton, 2006 .

Site-specific growth of Zno nanorods using catalysis-driven molecular-beam epitaxy

V. Varadarajan, David P. Norton, Young-Woo Heo, 2002 .

Implantation temperature dependence of Si activation in AlGaN

Tetsu Kachi, Stephen J. Pearton, Y. Irokawa, 2006 .

Reliability studies of AlGaN/GaN high electron mobility transistors

David J. Smith, Stephen J. Pearton, Brent P. Gila, 2013 .

A Comprehensive Approach to HEMT Reliability Testing

Stephen J. Pearton, Brent P. Gila, David Cheney, 2009 .

Hydrogen sensors based on Sc2O3/AlGaN/GaN high electron mobility transistors

Rishabh Mehandru, S. J. Pearton, Brent P. Gila, 2005 .

Ion Implantation Doping of InGaP, InGaAs, and InAlAs

J. M. Kuo, Stephen J. Pearton, W. S. Hobson, 1991 .

RF Characteristics of Room-Temperature-Deposited, Small Gate Dimension Indium Zinc Oxide TFTs

Jenshan Lin, David P. Norton, John M. Zavada, 2008 .

Flexible graphene-based chemical sensors on paper substrates.

Stephen J Pearton, Chongmin Lee, Jihyun Kim, 2013, Physical chemistry chemical physics : PCCP.

Plasma etching of III-V semiconductor thin films

Stephen J. Pearton, W. S. Hobson, C. R. Abernathy, 1992 .

Fast detection of a protozoan pathogen, Perkinsus marinus, using AlGaN/GaN high electron mobility transistors

John C. Roberts, Stephen J. Pearton, Chih-Yang Chang, 2009 .

Low bias dry etching of tungsten and dielectric layers on GaAs

Stephen J. Pearton, C. R. Abernathy, F. Ren, 1993 .

Improved optoelectronic mixing of InAlAs/InGaAs interdigitated-finger metal-semiconductor-metal photodetectors

William C. Ruff, Keith Aliberti, Michael R. Stead, 2003, Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498).

Influence of 60Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors

Amir Dabiran, Albert G. Baca, S. J. Pearton, 2002 .

Electrical detection of immobilized proteins with ungated AlGaN∕GaN high-electron-mobility Transistors

Amir Dabiran, Byoung Sam Kang, Andrei Osinsky, 2005 .

Wet chemical etching survey of III-nitrides

John C. Zolper, Stephen J. Pearton, C. R. Abernathy, 1997 .

Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO

David P. Norton, John M. Zavada, Stephen J. Pearton, 2003 .

Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors

Stephen J. Pearton, Brent P. Gila, C. R. Abernathy, 2003 .

Detection of hydrogen at room temperature with catalyst-coated multiple ZnO nanorods

Jenshan Lin, David P. Norton, Hung-Ta Wang, 2005 .

ECR plasma etching of chemically vapour deposited diamond thin films

Stephen J. Pearton, J. R. Lothian, Avishay Katz, 1992 .

AlGaN/GaN High electron mobility transistors and diodes fabricated on large area silicon on poly-SiC (SopSiC) substrates for lower cost and higher yield

Jenshan Lin, Robert Langer, Stephen J. Pearton, 2007 .

pH sensor using AlGaN∕GaN high electron mobility transistors with Sc2O3 in the gate region

John C. Roberts, S. J. Pearton, Hung-Ta Wang, 2007 .

Dielectric passivation effects on ZnO light emitting diodes

David P. Norton, H. S. Kim, Stephen J. Pearton, 2008 .

Minipressure sensor using AlGaN/GaN high electron mobility transistors

Amir Dabiran, S. J. Pearton, Peter P. Chow, 2009 .

InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor

Albert G. Baca, Jeffrey R. LaRoche, H. Q. Hou, 2000 .

High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3

Stephen J. Pearton, Akito Kuramata, Soohwan Jang, 2017 .

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

Yu Cao, Ivan I. Kravchenko, Stephen J. Pearton, 2013 .

Electrical detection of kidney injury molecule-1 with AlGaN∕GaN high electron mobility transistors

John C. Roberts, S. J. Pearton, Hung-Ta Wang, 2007 .

Plasma etching of III–V semiconductors in BCl3 chemistries: Part I: GaAs and related compounds

S. J. Pearton, W. S. Hobson, C. R. Abernathy, 1997 .

Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane

John C. Roberts, Stephen J. Pearton, Brent P. Gila, 2005 .

Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers

Rishabh Mehandru, Stephen J. Pearton, W. S. Hobson, 2003 .

(Invited) Microstrucutural Characterizaton of Stressed AlGaN/GaN HEMT Devices

Liu Lu, Mark E. Law, Stephen J. Pearton, 2014 .

Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

Rishabh Mehandru, C. Monier, Albert G. Baca, 2002 .

Comparison of ZnO metal–oxide–semiconductor field effect transistor and metal–semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition

David P. Norton, Stephen J. Pearton, Gou-Chung Chi, 2005 .

Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire

Joel R. Wendt, C. Monier, Albert G. Baca, 2002 .

Prostate specific antigen detection using AlGaN∕GaN high electron mobility transistors

John C. Roberts, Yiider Tseng, S. J. Pearton, 2007 .

Perspective—Opportunities and Future Directions for Ga2O3

S. J. Pearton, Akito Kuramata, Michael A. Mastro, 2017 .

Low specific contact resistance Ti∕Au contacts on ZnO

David P. Norton, Stephen J. Pearton, Hyun-Sik Kim, 2006 .

ICP etching of SiC

Carl-Mikael Zetterling, Mikael Östling, Stephen J. Pearton, 1998 .

Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization

Albert G. Baca, S. J. Pearton, T. Jenkins, 2003 .

1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers

Stephen J. Pearton, Akito Kuramata, Gwangseok Yang, 2017 .

GaN HEMT Degradation: Effect of RF Stress

S. J. Pearton, Brent P. Gila, C. R. Abernathy, 2012 .

High breakdown voltage in AlN/GaN metal–insulator–semiconductor high-electron-mobility transistors

Stephen J. Pearton, Brent P. Gila, Ya-Hsi Hwang, 2014 .

Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors

Liu Lu, Stephen J. Pearton, Brent P. Gila, 2010 .

Wet chemical etching of AlN and InAlN in KOH solutions

John C. Zolper, R. J. Shul, Stephen J. Pearton, 1996 .

Thermal stability of Ti/Al/Pt/Au and Ti/Au Ohmic contacts on n-type ZnCdO

David P. Norton, Andrei Osinsky, Stephen J. Pearton, 2006 .

Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy

S. J. Pearton, C. R. Abernathy, J. R. Lothian, 1993 .

Flexible Electronics Based on InGaZnO Transparent Thin Film Transistors

Stephen J. Pearton, F. Ren, S. Pearton, 2012 .

The promise and perils of wide-bandgap semiconductor nanowires for sensing, electronic, and photonic applications.

Stephen J Pearton, F. Ren, S. Pearton, 2007, Small.

High-speed modulation of single-mode and multi-mode 850 nm, intra-cavity contacted, shallow implant-apertured, vertical-cavity surface-emitting lasers

Stephen J. Pearton, W. S. Hobson, John Lopata, 2001, CLEO 2001.

AlGaN/GaN-based metal-oxide semiconductor diode-based hydrogen gas sensor

Stephen J. Pearton, Brent P. Gila, C. R. Abernathy, 2004 .

Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage

Joan M. Redwing, S. J. Pearton, K. P. Lee, 2001 .

Oxygen diffusion into SiO2-capped GaN during annealing

S. J. Pearton, Hyun Cho, R. G. Wilson, 1999 .

Role of graphene interlayers in mitigating degradation of Ni/Au ohmic contact morphology on p-type GaN

Stephen J. Pearton, Steven P. DenBaars, Changmin Lee, 2016 .

Vertical Geometry, 2-A Forward Current Ga2O3 Schottky Rectifiers on Bulk Ga2O3 Substrates

Akito Kuramata, F. Ren, S. Pearton, 2018, IEEE Transactions on Electron Devices.

Exhaled-Breath Detection Using AlGaN ∕ GaN High Electron Mobility Transistors Integrated with a Peltier Element

John C. Roberts, Stephen J. Pearton, Brent P. Gila, 2008 .

Effect of N2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma

S. J. Pearton, Peter P. Chow, J. M. Van Hove, 2000 .

GaN Metal Oxide Semiconductor Field Effect Transistors

Albert G. Baca, R. J. Shul, Stephen J. Pearton, 1999 .

High microwave power performance of self-aligned InGaP/GaAs heterojunction bipolar transistors

P. C. Chao, Shin-Shem Pei, Stephen J. Pearton, 1993, Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN∕GaN high electron mobility transistors

John C. Roberts, Hung-Ta Wang, Stephen J. Pearton, 2007 .

Temperature dependence of GaN high breakdown voltage diode rectifiers

Stephen J. Pearton, R. G. Wilson, Jen-Inn Chyi, 2000 .

Stamp wound assay for studying coupled cell migration and cell debris clearance.

Yu-Lin Wang, F. Ren, Fan Ren, 2010, Langmuir : the ACS journal of surfaces and colloids.

Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes

John C. Roberts, Stephen J. Pearton, Brent P. Gila, 2004 .

Growth and Characterization of GaN Nanowires for Hydrogen Sensors

Yongho Choi, Jason L. Johnson, Stephen J. Pearton, 2009 .

Degradation Mechanisms for GaN and GaAs High Speed Transistors

Stephen J. Pearton, Brent P. Gila, F. Ren, 2012, Materials.