Satwinder Malhi

A high performance 30 V extended drain RESURF CMOS device for VLSI intelligent power applications

P. C. Mei, K. Fujikura, T. Fawano, 1994, Proceedings of 1994 VLSI Technology Symposium.

TITE RAM: A NEW SOI DRAM GAIN CELL FOR MBIT DRAM's.

Ashwin H. Shah, Hisashi Shichijo, William F. Richardson, 1984 .

Hot-electron degradation of n-channel polysilicon MOSFETs

Hisashi Shichijo, R. Sundaresan, Sanjay K. Banerjee, 1988 .

Effects of grain boundary passivation on the characteristics of p-channel MOSFETs in LPCVD polysilicon

Hisashi Shichijo, R. F. Pinizzotto, Satwinder Malhi, 1983 .

A 4-Mbit DRAM with trench-transistor cell

H. E. Davis, Ashwin H. Shah, Hisashi Shichijo, 1986 .