M. Okamoto

Low on-resistance in inversion channel IEMOSFET formed on 4H-SiC C-face substrate

K. Arai, T. Yatsuo, K. Fukuda, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

1.8 mΩcm2, 10 A Power MOSFET in 4H-SiC

K. Suzuki, K. Arai, T. Yatsuo, 2006, 2006 International Electron Devices Meeting.

700-V 1.0-$hboxmOmega cdot hboxcm^2$Buried Gate SiC-SIT (SiC-BGSIT)

K. Arai, T. Yatsuo, M. Kasuga, 2006, IEEE Electron Device Letters.

Lateral RESURF MOSFET fabricated on 4H-SiC(0001/sup ~/) C-face

S. Suzuki, T. Yatsuo, K. Fukuda, 2004, IEEE Electron Device Letters.

Buried Gate Static Induction Transistors in 4H-SiC (SiC-BGSITs) with Ultra Low On-Resistance

K. Arai, T. Yatsuo, K. Yano, 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.