Erica A. Douglas

发表

Finite-element simulations of the effect of device design on channel temperature for AlGaN/GaN high electron mobility transistors

Stephen J. Pearton, Fan Ren, Erica A. Douglas, 2011 .

High mobility InGaZnO4 thin-film transistors on paper

S. J. Pearton, David P. Norton, S. Kim, 2009 .

Effect of Drain Bias on Degradation of AlGaN/GaN High Electron Mobility Transistors under X-Band Operation

Stephen J. Pearton, Glen D. Via, Fan Ren, 2011 .

Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors

Lin Zhou, Stephen J. Pearton, David J. Smith, 2011 .

Ultra-Wide-Bandgap Semiconductors for Power Electronics.

Jason C. Neely, Jack Flicker, J. R. Dickerson, 2015 .

Reliability studies of AlGaN/GaN high electron mobility transistors

David J. Smith, Stephen J. Pearton, Brent P. Gila, 2013 .

A Comprehensive Approach to HEMT Reliability Testing

Stephen J. Pearton, Brent P. Gila, David Cheney, 2009 .

GaN HEMT Degradation: Effect of RF Stress

S. J. Pearton, Brent P. Gila, C. R. Abernathy, 2012 .

Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors

Liu Lu, Stephen J. Pearton, Brent P. Gila, 2010 .

Flexible Electronics Based on InGaZnO Transparent Thin Film Transistors

Stephen J. Pearton, F. Ren, S. Pearton, 2012 .

Degradation Mechanisms for GaN and GaAs High Speed Transistors

Stephen J. Pearton, Brent P. Gila, F. Ren, 2012, Materials.