Andrei Osinsky

发表

Studies of electron trapping in III-nitride semiconductors

O. Lopatiuk, Andrei Osinsky, Leonid Chernyak, 2006, SPIE OPTO.

Wireless hydrogen sensor network using AlGaN/GaN high electron mobility transistor differential diode sensors

Fan Ren, Changzhi Li, Yu-Lin Wang, 2008 .

Polarization management techniques for enhanced vertical and lateral transport in III-nitride superlattices

Amir Dabiran, Andrei Osinsky, Peter P. Chow, 2006, SPIE OPTO.

InGaN blue light-emitting diodes with optimized n-GaN layer

Robert F. Karlicek, Andrei Osinsky, Ivan Eliashevich, 1999, Photonics West.

High Mg content wurtzite phase MgxZn1-xO epitaxial film grown via pulsed-metal organic chemical vapor deposition (PMOCVD)

Ross Miller, Valeria Beletsky, Fikadu Alema, 2016, SPIE OPTO.

Wireless Hydrogen Sensor Networks Using AlGaN/GaN High Electron Mobility Transistor Based Differential Diodes Sensor

Yu-Lin Wang, Amir Dabiran, Jenshan Lin, 2008 .

Development of ZnMgCdO-based alloys and heterostructures for optical applications

David C. Look, Andrei Osinsky, Michael Gerhold, 2006, SPIE OPTO.

Modeling and characterization of GaN p-i-n photodiodes

Amir Dabiran, Junqing Xie, Jie Deng, 2006, SPIE Optics + Photonics.

Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction

Henryk Temkin, Andrei Osinsky, Remigijus Gaska, 1998 .

Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes

Amir Dabiran, Andrei Osinsky, Stephen J. Pearton, 2008 .

Pulsed-Metal Organic Chemical Vapor Deposition (PMOCVD) for Growth of Single Phase Wurtzite Mg x Zn 1-x O Epitaxial Film with High Mg Content ( x =0.51)

Valeria Beletsky, Fikadu Alema, Winston V. Schoenfeld, 2016 .

Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

Rishabh Mehandru, Andrei Osinsky, Stephen J. Pearton, 2002 .

Stable hydrogen sensors from AlGaN∕GaN heterostructure diodes with TiB2-based Ohmic contacts

Changzhi Li, Amir Dabiran, Jenshan Lin, 2007 .

Minority electron transport anisotropy in p-type Al/sub x/Ga/sub 1-x/N/GaN superlattices

Andrei Osinsky, Leonid Chernyak, Vladimir Fuflyigin, 2001 .

Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

Rishabh Mehandru, Andrei Osinsky, Stephen J. Pearton, 2002 .

Robust Detection of Hydrogen Using Differential AlGaN/GaN High Electron Mobility Transistor Sensing Diodes

Changzhi Li, Amir Dabiran, Jenshan Lin, 2007 .

Selective Detection of Hg"II… Ions from Cu"II… and Pb"II… Using AlGaN/GaN High Electron Mobility Transistors

Amir Dabiran, Yiider Tseng, S. J. Pearton, 2007 .

Avalanche breakdown and breakdown luminescence of AlGaN multiquantum wells

Robert R. Alfano, Amir Dabiran, Stephen Gundry, 2005 .

High quality GaN–InGaN heterostructures grown on (111) silicon substrates

Henryk Temkin, Andrei Osinsky, Leonid Chernyak, 1996 .

Low Hg(II) ion concentration electrical detection with AlGaN/GaN high electron mobility transistors

Amir Dabiran, Andrei Osinsky, Stephen J. Pearton, 2008 .

Free-standing films of PbSc0.5Ta0.5O3 for uncooled infrared detectors

Andrei Osinsky, I. Gergis, Vladimir Fuflyigin, 2001 .

Robust detection of hydrogen using differential AlGaN∕GaN high electron mobility transistor sensing diodes

Changzhi Li, Amir Dabiran, Jenshan Lin, 2006 .

Enhanced vertical transport in p-type AlGaN∕GaN superlattices

Amir Dabiran, Andrei Osinsky, Peter P. Chow, 2004 .

Impact of aluminum concentration and magnesium doping on the effect of electron injection in p-AlxGa1−xN

Amir Dabiran, Andrei Osinsky, Leonid Chernyak, 2003 .

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

Amir Dabiran, Andrei Osinsky, Andrew M. Wowchak, 2008 .

Electrical properties of undoped bulk ZnO substrates

Amir Dabiran, David P. Norton, Andrei Osinsky, 2006 .

Temperature and pulse duration effects on the growth of MgZnO via pulsed metal organic chemical vapor deposition

Fikadu Alema, Winston V. Schoenfeld, Andrei Osinsky, 2016 .

Influence of electron injection on performance of GaN photodetectors

Andrei Osinsky, Leonid Chernyak, Alfons Schulte, 2002 .

Detection of halide ions with AlGaN∕GaN high electron mobility transistors

Amir Dabiran, Andrei Osinsky, Stephen J. Pearton, 2005 .

Growth of ferroelectric oxide films on n-GaN/c-sapphire structures

Andrei Osinsky, Vladimir Fuflyigin, Feiling Wang, 2000 .

Cathodoluminescence studies of the electron injection-induced effects in GaN

Andrei Osinsky, Leonid Chernyak, Mikhail Klimov, 2003 .

Low noise p-π-n GaN ultraviolet photodetectors

Henryk Temkin, Andrei Osinsky, Remigijus Gaska, 1997 .

Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices

Andrei Osinsky, Leonid Chernyak, Vladimir Fuflyigin, 2000 .

Persistent photoconductivity in p-type ZnO(N) grown by molecular beam epitaxy

Andrei Osinsky, Stephen J. Pearton, A. V. Govorkov, 2007 .

Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

Michael S. Shur, Andrei Osinsky, Gregory L. Snider, 1998 .

Solar blind photodetector based on epitaxial zinc doped Ga2O3 thin film

Partha Mukhopadhyay, Fikadu Alema, Winston V. Schoenfeld, 2017 .

MgZnO/AlGaN heterostructure light-emitting diodes

Amir Dabiran, S. J. Pearton, O. Lopatiuk, 2004 .

Electronic states in modulation doped p-AlGaN/GaN superlattices

Andrei Osinsky, Stephen J. Pearton, Peter P. Chow, 2001 .

Optical Properties of II-IV-N2 Semiconductors

John F. Muth, Ivan Avrutsky, Henry O. Everitt, 2004 .

Pyroelectric properties of AlN

Andrei Osinsky, Vladimir Fuflyigin, Peter E. Norris, 2000 .

Electrical detection of immobilized proteins with ungated AlGaN∕GaN high-electron-mobility Transistors

Amir Dabiran, Byoung Sam Kang, Andrei Osinsky, 2005 .

Schottky barrier photodetectors based on AlGaN

Henryk Temkin, Andrei Osinsky, M. Khan, 1998 .

The optical signature of electron injection in p-(Al)GaN

O. Lopatiuk, Andrei Osinsky, Leonid Chernyak, 2003 .

Visible-blind GaN Schottky barrier detectors grown on Si(111)

R. Gaska, John F. Muth, Henryk Temkin, 1998 .

Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates

Michael S. Shur, Andrei Osinsky, Gregory L. Snider, 1997 .

Thermal stability of Ti/Al/Pt/Au and Ti/Au Ohmic contacts on n-type ZnCdO

David P. Norton, Andrei Osinsky, Stephen J. Pearton, 2006 .

Effect of Annealing on Defects in As‐Grown and γ‐Ray Irradiated n‐GaN Layers

Igor L. Krestnikov, A. A. Lebedev, Andrei Osinsky, 1999 .

Electron beam and optical depth profiling of quasibulk GaN

Jacek B. Jasinski, David C. Look, Andrei Osinsky, 2000 .

Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors

Amir Dabiran, S. J. Pearton, Andrei Osinsky, 2007 .

Growth of high Mg content wurtzite MgZnO epitaxial films via pulsed metal organic chemical vapor deposition

Valeria Beletsky, Fikadu Alema, Winston V. Schoenfeld, 2016 .

Electron beam induced current measurements of minority carrier diffusion length in gallium nitride

Henryk Temkin, Andrei Osinsky, Leonid Chernyak, 1996 .

Minority Carrier Transport in ZnO and Related Materials

Andrei Osinsky, Leonid Chernyak, Alfons Schulte, 2001 .

Annealing temperature stability of ir and ni-based ohmic contacts on AlGaN/GaN high electron mobility transistors

Amir Dabiran, Andrei Osinsky, Stephen J. Pearton, 2004 .

Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing

Rishabh Mehandru, Andrei Osinsky, Stephen J. Pearton, 2002 .