Gary N. Taylor

发表

Recent results in the development of an integrated EUVL laboratory tool

Richard H. Stulen, R. W. Arling, John E. Bjorkholm, 1995, Advanced Lithography.

Ronald G. Larson, Gary N. Taylor, L. E. Stillwagon, 1987, Advanced Lithography.

Optimization of DUV chemically amplified resist platforms for SCALPEL e-beam exposure

Myrtle I. Blakey, Robert L. Brainard, Anthony E. Novembre, 2000, Advanced Lithography.

Plasma polymerized organosilane network polymers: high-performance resists for positive- and negative-tone deep-UV lithography

Timothy W. Weidman, Gary N. Taylor, O. Joubert, 1994, Advanced Lithography.

Methacrylate resists and antireflective coatings for 193-nm lithography

George G. Barclay, Robert J. Kavanagh, Peter Trefonas, 1999, Advanced Lithography.

Practical resists for 193-nm lithography using 2.38% TMAH: physicochemical influences on resist performance

George G. Barclay, Robert J. Kavanagh, Peter Trefonas, 1997, Advanced Lithography.

A Novel Photooxidative Scheme for Imaging at Polymer Surfaces

Omkaram Nalamasu, Gary N. Taylor, G. Taylor, 1989, Advanced Lithography.

Resist schemes for soft x-ray lithography

David L. Windt, William M. Mansfield, Richard S. Hutton, 1991, Optics & Photonics.

Printing technology for ubiquitous electronics

Gary N. Taylor, Julien Noel, Jayna R. Sheats, 2010 .

Single-component chemically amplified resist materials for electron-beam and x-ray lithography

Elsa Reichmanis, J. E. Hanson, Omkaram Nalamasu, 1991, Other Conferences.

Multiple-anion nonvolatile acetal (MANA) resists

Robert L. Brainard, Gary N. Taylor, Joseph F. Mackevich, 2001, SPIE Advanced Lithography.

A method for manufacturing a device

Elsa Reichmanis, Larry F. Thompson, Gary N. Taylor, 1991 .

Organic antireflective coatings for 193-nm lithography

Robert J. Kavanagh, Peter Trefonas, Robert F. Blacksmith, 1999, Advanced Lithography.

Aminodisilanes as silylating agents for dry-developed positive-tone resists for deep-ultraviolet (248-nm) and extreme ultraviolet (13.5-nm) microlithography

Richard S. Hutton, David R. Wheeler, Gary N. Taylor, 1995, Advanced Lithography.

Factors influencing the properties of fluoropolymer-based resists for 157-nm lithography

Cheng-Bai Xu, Kirk W. Brown, Gary N. Taylor, 2002, SPIE Advanced Lithography.

Extreme UV resist technology: the limits of silylated resist resolution

Avijit K. Ray-Chaudhuri, Daniel A. Tichenor, Bruno LaFontaine, 1995, Advanced Lithography.

Lithographic, Photochemical And O2 RIE Properties Of Three Polysilane Copolymers

J. M. Zeigler, Gary N. Taylor, Thomas M. Wolf, 1988, Advanced Lithography.

New absorptive mode reflective liquid-crystal display device

Donald Lawrence White, Gary N. Taylor, G. Taylor, 1974 .

New silicon‐rich silylating reagents for dry‐developed positive‐tone deep‐ultraviolet lithography

May Cheng, David R. Wheeler, Gary N. Taylor, 1993 .

Radiation-induced chemistry of poly(4-[(tert-butoxycarbonyl)oxy]styrene-co-sulfur dioxide)

Elsa Reichmanis, Omkaram Nalamasu, Janet M. Kometani, 1992 .

Application of Plasmask R resist and the DESIRE process to lithography at 248 nm

Omkaram Nalamasu, Richard S. Hutton, Gary N. Taylor, 1990 .

Gas‐Phase‐Functionalized Plasma‐Developed Resists:Initial Concepts and Results for Electron‐Beam Exposure

Gary N. Taylor, L. E. Stillwagon, G. Taylor, 1984 .

Positive, chemically-amplified aromatic methacrylate resist employing the tetrahydropyranyl protecting group

Francis M. Houlihan, Gary N. Taylor, L. E. Stillwagon, 1991 .

Resist etching kinetics and pattern transfer in a helicon plasma

Gary N. Taylor, C. W. Jurgensen, R. S. Hutton, 1992 .

Submicron, soft x‐ray fluorescence imaging

Donald Lawrence White, John E. Bjorkholm, A. A. MacDowell, 1995 .

Plasma‐Developed X‐Ray Resists

Gary N. Taylor, G. Taylor, Thomas M. Wolf, 1980 .

Plasma development of a silylated bilayer resist: Effects of etch chemistry on critical dimension control and feature profiles

Richard S. Hutton, Gary N. Taylor, Craig H. Boyce, 1995 .

Positive‐tone silylated, dry‐developed, deep ultraviolet resist with 0.2 μm resolution

Raymond A. Cirelli, Richard S. Hutton, David R. Wheeler, 1994 .

Multiple Anion Nonvolatile Acetal (MANA) Resists

Erik H. Anderson, Robert L. Brainard, Gary N. Taylor, 2001 .

Top surface imaging process and materials development for 193 nm and extreme ultraviolet lithography

Roger F. Sinta, Donna J. O'Connell, David R. Wheeler, 1998 .

Sensitive chlorine-containing resists for X-ray lithography

G. A. Coquin, Gary N. Taylor, G. Coquin, 1977 .

The Scope and Mechanism of New Positive Tone Gas‐Phase‐Functionalized Plasma‐Developed Resists

Gary N. Taylor, Thirumalai N. C. Venkatesan, Thomas M. Wolf, 1984 .